A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs
The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC)
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …
[HTML][HTML] Experimental and theoretical studies of the physicochemical and mechanical properties of multi-layered TiN/SiC films: Temperature effects on the …
AD Pogrebnjak, VI Ivashchenko, PL Skrynskyy… - Composites Part B …, 2018 - Elsevier
Abstract Nanoscale multilayered TiN/SiC films are of great importance in many electronic
and industrial fields. The careful control over the structure of the laminates, nanocrystalline …
and industrial fields. The careful control over the structure of the laminates, nanocrystalline …
SiC power MOSFETs performance, robustness and technology maturity
A Castellazzi, A Fayyaz, G Romano, L Yang… - Microelectronics …, 2016 - Elsevier
Abstract Relatively recently, SiC power MOSFETs have transitioned from being a research
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …
A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …
Short-circuit failure mechanism of SiC power MOSFETs
Failure mechanisms during short-circuit conditions of Silicon Carbide Power MOSFETs are
analysed in this work, and a possible theoretical explanation is provided. Insight into the …
analysed in this work, and a possible theoretical explanation is provided. Insight into the …
A temperature-dependent SPICE model of SiC power MOSFETs for within and out-of-SOA simulations
This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The
model describes the static and dynamic behavior and accounts for leakage current and …
model describes the static and dynamic behavior and accounts for leakage current and …
Investigations on the degradation of 1.2-kV 4H-SiC MOSFETs under repetitive short-circuit tests
X Zhou, H Su, Y Wang, R Yue, G Dai… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
The long-term operational reliability of silicon carbide (SiC) MOSFETs needs to be further
verified before they could replace silicon counterparts in power applications. In this paper …
verified before they could replace silicon counterparts in power applications. In this paper …
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs
C Chen, D Labrousse, S Lefebvre, M Petit… - Microelectronics …, 2015 - Elsevier
This paper presents experimental robustness tests made on Silicon Carbide (SiC) MOSFETs
and SiC Bipolar Junction Transistors (BJTs) submitted to short-circuit operations (SC) or …
and SiC Bipolar Junction Transistors (BJTs) submitted to short-circuit operations (SC) or …
Short-circuit degradation of 10-kV 10-A SiC MOSFET
The short-circuit behavior of power devices is highly relevant for converter design and fault
protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC …
protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC …
Short-circuit robustness of SiC power MOSFETs: Experimental analysis
A Castellazzi, A Fayyaz, L Yang… - 2014 IEEE 26th …, 2014 - ieeexplore.ieee.org
This paper proposes a thorough experimental characterization of the performance of
commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is …
commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is …