Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review
Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in
recent years. Although the technology seemed to be difficult to reproduce by other labs at …
recent years. Although the technology seemed to be difficult to reproduce by other labs at …
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process
Layer transfer techniques have been extensively explored for semiconductor device
fabrication as a path to reduce costs and to form heterogeneously integrated devices. These …
fabrication as a path to reduce costs and to form heterogeneously integrated devices. These …
Remote epitaxial interaction through graphene
The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the
substrate surface, which still enable adatoms to follow the atomic motif of the underlying …
substrate surface, which still enable adatoms to follow the atomic motif of the underlying …
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …
Graphene buffer layer on SiC as a release layer for high-quality freestanding semiconductor membranes
Free-standing crystalline membranes are highly desirable owing to recent developments in
heterogeneous integration of dissimilar materials. Van der Waals (vdW) epitaxy enables the …
heterogeneous integration of dissimilar materials. Van der Waals (vdW) epitaxy enables the …
[HTML][HTML] Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth
Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding
between crystalline substrate and atomic building blocks, has been a key technique in the …
between crystalline substrate and atomic building blocks, has been a key technique in the …
Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene
Y Qu, Y Xu, B Cao, Y Wang, J Wang… - ACS Applied Materials …, 2022 - ACS Publications
Remote epitaxy is a very promising technique for the preparation of single-crystal thin films
of flexibly transferred III–V group semiconductors. However, the epilayer nucleation …
of flexibly transferred III–V group semiconductors. However, the epilayer nucleation …
Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy
In this study, we investigate the thermochemical stability of graphene on the GaN substrate
for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite …
for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite …
Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy
W Song, Q Chen, K Yang, M Liang, X Yi… - Advanced Functional …, 2023 - Wiley Online Library
Group III‐nitrides have attracted significant attention in recent years for their wide tunable
band‐gaps and excellent optoelectronic capabilities, which are advantageous for several …
band‐gaps and excellent optoelectronic capabilities, which are advantageous for several …