The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …

High-temperature-resistant integrated circuits with excellent flexibility, a high integration
level (nanoscale transistors), and low power consumption are highly desired in many fields …

Wireless power transfer systems and plasma generators are among the increasing number
of applications that use high-frequency power converters. Increasing switching frequency …

Extreme environments such as the Venus atmosphere are among the emerging applications
that demand electronics that can withstand high-temperature oxidizing conditions. While …

The miniature heat sink is an essential component in integrated circuit packaging, playing a
vital role in ensuring the stable and reliable performance of integrated circuits. In this paper …

The–characteristics of 4H-SiC N/P-channel MOSFETs have been carried out at high
temperatures up to 300° C. Different scattering mechanisms of surface mobility for 4H-SiC N …

In this work, we demonstrate CMOS integration that is fully compatible with a commercial
double-implanted MOS (DMOS) process in 4H-SiC without requiring additional masks and …

In this research, the thermal stability of single-stage amplifiers based on a 4H-SiC MOSFET
with a TiN gate electrode was investigated. The results show that after 100 h aging at 400 C …

The demand for accurate temperature sensing in extreme temperatures is increasing.
Traditional silicon-based integrated temperature sensors usually cannot survive above 200° …

This letter reports the bias temperature instabilities (BTI) of 4H-SiC CMOS devices with
different gate lengths (L) and gate widths (W) for integrated circuits at 400° C for the first …