Aluminium nitride integrated photonics: a review
Integrated photonics based on silicon has drawn a lot of interests, since it is able to provide
compact solution for functional devices, and its fabrication process is compatible with the …
compact solution for functional devices, and its fabrication process is compatible with the …
Ultra-high-Q UV microring resonators based on a single-crystalline AlN platform
Development of low-loss photonic components in the ultraviolet (UV) band will open new
prospects for classical and quantum optics. Compared with other integrated platforms …
prospects for classical and quantum optics. Compared with other integrated platforms …
III-nitride photonic cavities
R Butté, N Grandjean - Nanophotonics, 2020 - degruyter.com
Owing to their wide direct bandgap tunability, III-nitride (III-N) compound semiconductors
have been proven instrumental in the development of blue light-emitting diodes that led to …
have been proven instrumental in the development of blue light-emitting diodes that led to …
CMOS-foundry-based blue and violet photonics
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Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks
We demonstrate phase-matched second harmonic generation in gallium nitride on silicon
microdisks. The microdisks are integrated with side-coupling bus waveguides in a two …
microdisks. The microdisks are integrated with side-coupling bus waveguides in a two …
[HTML][HTML] Polarization study of single color centers in aluminum nitride
Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum
light source, many of which operate at room temperature. We examine a family of color …
light source, many of which operate at room temperature. We examine a family of color …
III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet
We present a series of microdisk lasers realized within the same GaN-on-Si photonic
platform scheme, and operating at room temperature under pulsed optical pumping over a …
platform scheme, and operating at room temperature under pulsed optical pumping over a …
Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
S Goerke, M Ziegler, A Ihring, J Dellith, A Undisz… - Applied Surface …, 2015 - Elsevier
Aluminum nitride (AlN) thin films with thicknesses from 20 to 100 nm were deposited on
silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic …
silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic …
Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared
Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal
slab. The cavities are based on the popular L3 design, which was optimized using an …
slab. The cavities are based on the popular L3 design, which was optimized using an …
Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon
We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform
operating around 1550 nm and fabricated on a silicon substrate. Width-modulated …
operating around 1550 nm and fabricated on a silicon substrate. Width-modulated …