This paper will review emerging non-volatile memory (NVM) technologies, with the focus on
phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM) …

Electrons have a charge and a spin, but until recently these were considered separately. In
classical electronics, charges are moved by electric fields to transmit information and are …

Various new nonvolatile memory (NVM) technologies have emerged recently. Among all the
investigated new NVM candidate technologies, spin-torque-transfer memory (STT-RAM, or …

In this paper, a review of the developments in MRAM technology over the past 20 years is
presented. The various MRAM generations are described with a particular focus on spin …

Non-volatile RAM (NV-RAM) enables instant-on/off computing, which drastically reduces
power consumption. One of the most promising candidates for NV-RAM technology is the …

Spin-transfer torque random access memory (STT-RAM) is a potentially revolutionary
universal memory technology that combines the capacity and cost benefits of DRAM, the fast …

Building programmable resistive devices in contact holes at the crossover of a plurality of
conductor lines in more than two vertical layers is disclosed. There are plurality of first …

In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with
their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets …

This paper is both a review of some recent developments in the utilization of magnetism for
applications to logic and memory and a description of some new innovations in …

Densely embedding Magnetic Tunnel Junctions (MTJ) in CMOS logic circuits is considered
as one potentially powerful solution to bring non volatility, instant on/off and low standby …