In order to shift the light emission of nitride quantum structures towards the red color, the
technological problem of low In incorporation in InGaN− based heterostructures has to be …

This Review provides a thorough description of the experimental progress on the InN family
and other relevant compounds. Although InN is of great interest, many of its properties are …

BAlN, an ultra-wide bandgap semiconductor, has attracted the interest of many due to its
potential in high-power electronics and high-efficiency optoelectronics. However, the solid …

The use of strained substrates may overcome indium incorporation limits without inducing
plastic relaxation in InGaN quantum wells, and this is particularly important for short-period …

III–V GaN‐based nitride semiconductors have attracted interest because their bandgaps can
be tuned by constructing alloys and superlattices, and by applying lattice strain. Herein, the …

通信技術が発達した現代社会において, コンピュータなどの電子デバイスの発展は必要不可欠な
ものになっている. 半導体は交流・直流変換や電圧・周波数の制御用のパワーデバイスとして …