[HTML][HTML] Spintronics based random access memory: a review
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular
interest for magnetic random-access memories because of their excellent thermal stability …
interest for magnetic random-access memories because of their excellent thermal stability …
Basic principles of STT-MRAM cell operation in memory arrays
AV Khvalkovskiy, D Apalkov, S Watts… - Journal of Physics D …, 2013 - iopscience.iop.org
For reliable operation, individual cells of an STT-MRAM memory array must meet specific
requirements on their performance. In this work we review some of these requirements and …
requirements on their performance. In this work we review some of these requirements and …
Recent developments in perpendicular magnetic anisotropy thin films for data storage applications
The incessant demand for higher density, faster access time and lower power consuming
memory devices such as random access memories have driven tremendous research and …
memory devices such as random access memories have driven tremendous research and …
Spin-transfer torque memories: Devices, circuits, and systems
Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …
Technology comparison for large last-level caches (L3Cs): Low-leakage SRAM, low write-energy STT-RAM, and refresh-optimized eDRAM
Large last-level caches (L 3 Cs) are frequently used to bridge the performance and power
gap between processor and memory. Although traditional processors implement caches as …
gap between processor and memory. Although traditional processors implement caches as …
Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology
Recently, spin-transfer torque magnetic random access memory (STT-MRAM) has been
considered as a promising universal memory candidate for future memory and computing …
considered as a promising universal memory candidate for future memory and computing …
A fully functional 64 Mb DDR3 ST-MRAM built on 90 nm CMOS technology
ND Rizzo, D Houssameddine, J Janesky… - IEEE Transactions …, 2013 - ieeexplore.ieee.org
A spin torque magnetoresistive random access memory (ST-MRAM) holds great promise to
be a fast, high density, nonvolatile memory that can enhance the performance of a variety of …
be a fast, high density, nonvolatile memory that can enhance the performance of a variety of …
Low power magnetic full-adder based on spin transfer torque MRAM
Power issues have become a major problem of CMOS logic circuits as technology node
shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory …
shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory …