Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …

We have experimentally investigated disturb-free operations of multilevel cell (MLC)
ferroelectric field-effect transistors (FeFETs) in a NAND array. The fabricated FeFET cells are …

This letter studies the impact of multi-domain dynamics on the memory window (MW) of a
Ferroelectric FET (FeFET). The memory window primarily depends on the density of …

In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The
model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET …

In this study, we present an analytical equation for describing the memory window of
ferroelectric field-effect transistors (FeFETs). The analytical equation is derived based on the …

The nucleation-limited switching (NLS) model has been shown in the literature to explain
successfully the dynamics of polarization switching of polycrystalline ferroelectric films (FE) …

In this article, we present a compact model of metal–ferroelectric (FE)–insulator–
semiconductor (MFIS) tunnel junction. Unlike the metal–FE–metal (MFM) structure with only …

Due to the potential for technological application, there has been an explosion of interest in
heavily polycrystalline ferroelectric nanofilms, such as those of doped hafnium oxide …

In this paper, we develop a compact model of antiferroelectric (AFE) capacitors. AFE
material, similar to the ferroelectric (FE) material, is a good candidate for non-volatile …

A generalized and fast multidomain phase-field-based compact model for the metal-
ferroelectric-metal (MFM) capacitor is presented. Time-dependent Landau–Ginzburg (TDGL) …