Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
Selective area doping of GaN towards high-power applications
Selective area doping in GaN, especially p-type, is a critical and inevitable building block for
&# xD; the realization of advanced device structures for high-power applications, including …
&# xD; the realization of advanced device structures for high-power applications, including …
Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN pn junctions for efficient power devices
We report correlated nanoscale mapping of the structure, composition, and properties of
regrown GaN pn junctions to identify how etching and non-planar regrowth processes limit …
regrown GaN pn junctions to identify how etching and non-planar regrowth processes limit …
[HTML][HTML] Computational Fermi level engineering and doping-type conversion of Mg: Ga2O3 via three-step synthesis process
Gallium oxide (Ga 2 O 3) is being actively explored for electronics that can operate at high
power, temperature, and frequency as well as for deep-ultraviolet optoelectronics and other …
power, temperature, and frequency as well as for deep-ultraviolet optoelectronics and other …
Morphology control and crystalline quality of p-type GaN shells grown on coaxial GaInN/GaN multiple quantum shell nanowires
W Lu, N Nakayama, K Ito, S Katsuro… - … Applied Materials & …, 2021 - ACS Publications
The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple
quantum shell (MQS) nanowires (NWs) were investigated using metal–organic chemical …
quantum shell (MQS) nanowires (NWs) were investigated using metal–organic chemical …
Etched-and-regrown GaN P–N diodes with low-defect interfaces prepared by in situ TBCl etching
The ability to form pristine interfaces after etching and regrowth of GaN is a prerequisite for
epitaxial selective area doping, which in turn is needed for the formation of lateral PN …
epitaxial selective area doping, which in turn is needed for the formation of lateral PN …
Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments
This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-
regrown p-GaN after exposure to a simulated Venus environment (460 C, $94 bar …
regrown p-GaN after exposure to a simulated Venus environment (460 C, $94 bar …
Selective area doping in gallium nitride: a retrospective of the ARPA-E PNDIODES program
IC Kizilyalli, EP Carlson - ECS Transactions, 2021 - iopscience.iop.org
As silicon-based semiconductors are fast approaching their performance limits for high
power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and …
power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and …
[HTML][HTML] Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical …
We report on ammonia and plasma-assisted molecular beam epitaxy (NH 3-MBE and
PAMBE) grown GaN layers with a low net carrier concentration (N net). Growth parameters …
PAMBE) grown GaN layers with a low net carrier concentration (N net). Growth parameters …
Selective area etching and doping of GaN for high-power applications
Selective area doping (SAD) of gallium nitride (GaN), especially p-type doping, is desirable
for high-power applications but yet challenging. The lack of this process greatly limits the …
for high-power applications but yet challenging. The lack of this process greatly limits the …