This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …

This paper explores an ultra-low-power 10T subthreshold SRAM with high stabilities based
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …

Static random-access memories (SRAMs), which are the most ubiquitous in modern system-
on-chips, suffer from high power dissipation and poor stability in advanced complementary …

This paper proposed a radiation-hardened memory cell (RHMC12T) by polar design for
space applications. The proposed cell has the following advantages:(1) it can tolerate all …

The design of power‐efficient SRAM cells is necessary for biomedical applications such as
body area networks (BANs) to extent their battery life. SRAM cell's power consists of two …

The modern system‐on‐chips require stable and low‐power SRAM cells due to technology
scaling and limited sources of energy. Therefore, a stability‐and power‐improved 11T …

This paper presents a transmission-gate-based 10T (TG10T) subthreshold SRAM cell for
internet of things applications. To estimate its relative strength, it is compared with six …

This paper presents a robust low‐power 10T SRAM cell (RLP10T) with a novel read/write
assist mechanism, improving both read static noise margin (RSNM) and write static noise …

The use of graphene nano-ribbon field-effect transistors (GNRFETs) in the nanoscale
circuits design is challenging because there are several adjustable parameters that need to …

Power dissipation is considered one of the important issues in low power Very-large-scale
integration (VLSI) circuit design and is related to the threshold voltage. Generally, the sub …