The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …

Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …

In this paper, for the first time, we have experimentally demonstrated enhancement mode (e-
mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type …

III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent
candidates for high-power, radio-frequency (rf) and high-temperature applications. However …

Understanding the individual contributions of the factors that influence the electrical
properties of a material is important for controlling these properties. In this study, the effects …

Abstract Design criteria for normally-off operation in Schottky gate p-GaN/AlGaN/GaN
HEMTs have been investigated. The threshold voltage (V th) of this structure is determined …

The interface and bulk properties of∼ 20 nm hafnium-silicon-oxide (HfSiO x) dielectric
deposited by atomic layer deposition (ALD) on (001) β-Ga 2 O 3 were investigated …

Hafnium silicate (HfSiO x) has been applied to AlGaN/GaN high-electron-mobility transistors
(HEMTs) as a high κ gate dielectric. The (HfO 2)/(SiO 2) laminate structure was deposited on …

In this paper, we have demonstrated the optimized device performance in the Γ-shaped gate
AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) by …