Semiconductor plasmonics has become a frontier for light manipulation beyond the
diffraction limit, offering a broader spectral range and higher flexibility of plasmon …

Low hole mobility of nitride semiconductors is a significant impediment to realizing their high-
efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band …

Plasmon resonance represents the collective oscillation of free electron gas density and
enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the …

Due to ultrabright and stable blue light emission, GaN has emerged as one of the most
famous semiconductors of the modern era, useful for light-emitting diodes, power …

Rare-earth nitride (REN) pnictides are exciting materials due to their localized and strongly
correlated 4f-electrons that lead to interesting magnetic properties useful for spintronic …

Traditional computation based on von Neumann architecture is limited by time and energy
consumption due to data transfer between the storage and the processing units. The von …

ScN is an emerging transition metal nitride with unique physical properties arising from the d
electrons of Sc. In this letter, we present the results of optical characterization techniques …

Van der Waals heteroepitaxy refers to the growth of strain-and misfit-dislocation-free
epitaxial films on layered substrates or vice versa. Such heteroepitaxial technique can be …

Electron mobility in nitride semiconductors is limited by electron–phonon, defect, grain-
boundary, and dislocation scatterings. Scandium nitride (ScN), an emerging rocksalt indirect …

With the constant miniaturization of device technologies, it has become essential to
understand and engineer the electronic properties of semiconductors in nanoscale …