The successful fabrication of Nanosheet (NS) FET by Samsung/IBM for below 7 nm
technology nodes has geared up the semiconductor industry towards future electronics. In …

This paper investigates the various device dimensions such as gate length (Lg), nanosheet
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …

In this paper, the effect of channel parameters like channel thickness (T Si) and channel
length (L g) on the analog/RF performance of high-K gate-stack based junctionless Trigate …

This manuscript for the first time provides insights on the impact of different spacer materials
for the vertically stacked Junctionless Nanosheet Field Effect Transistor (JL-NSFET). The …

In this work, gate-stack based junctionless Si-nanotube (JLSiNT) FET is studied to
investigate the effect of high-K gate dielectric material in-conjunction with interfacial layer …

This paper investigates the analog/RF performance of inner gate engineered junctionless
silicon nanotube (JLSiNT) FETs. We demonstrate that the RF performance of symmetric …

The optimization of device dimensions along with high-k gate dielectric is investigated in this
work for improving RF/analog performance of double gate (DG) TFET device. Through …

As everyone knows the internet of underwater things (IoUT) is an innovative discussion of
internet of things (IoT). To help the idea of IoUT, underwater wireless sensor networks …

Nanosheet field effect transistors (NS-FET) are a most promising candidate for next-
generation semiconductor devices for sub-7-nm technology nodes. This work explores a two …

This paper explores the temperature sensitivity of Inner-gate engineered junctionless silicon
nanotube FET (JL-SiNT-FET) on analog/RF performance. It is found that the reduction in the …