Recent advances in negative capacitance FinFETs for low-power applications: a review
V Chauhan, DP Samajdar - IEEE Transactions on Ultrasonics …, 2021 - ieeexplore.ieee.org
In the contemporary era of Internet-of-Things (IoT), there is an extensive search for
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
Negative capacitance behavior in a leaky ferroelectric
AI Khan, U Radhakrishna, K Chatterjee… - … on Electron Devices, 2016 - ieeexplore.ieee.org
We present a simulation study of the negative capacitance effect incorporating leakage
through the ferroelectric (FE) negative capacitor. The dynamics of the FE is modeled using …
through the ferroelectric (FE) negative capacitor. The dynamics of the FE is modeled using …
Analysis and compact modeling of negative capacitance transistor with high ON-current and negative output differential resistance—Part II: Model validation
In this paper, we show a validation of our compact model for negative capacitance FET
(NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations …
(NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations …
Engineering negative differential resistance in NCFETs for analog applications
H Agarwal, P Kushwaha, JP Duarte… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In negative capacitance field-effect transistors (NCFETs), drain current may decrease with
increasing in the saturation region, leading to negative differential resistance (NDR). While …
increasing in the saturation region, leading to negative differential resistance (NDR). While …
Compact models of negative-capacitance FinFETs: Lumped and distributed charge models
JP Duarte, S Khandelwal, AI Khan… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
This work presents insights into the device physics and behaviors of ferroelectric based
negative capacitance FinFETs (NC-FinFETs) by proposing lumped and distributed compact …
negative capacitance FinFETs (NC-FinFETs) by proposing lumped and distributed compact …
Evaluation of negative capacitance ferroelectric MOSFET for analog circuit applications
Negative capacitance ferroelectric (FE) field-effect transistor (FeFET) is promising to address
the issue of the increasing power density in digital circuit by realizing sub-60 mV/decade …
the issue of the increasing power density in digital circuit by realizing sub-60 mV/decade …
Impact of parasitic capacitance and ferroelectric parameters on negative capacitance FinFET characteristics
S Khandelwal, JP Duarte, AI Khan… - IEEE Electron …, 2016 - ieeexplore.ieee.org
In this letter, we present a compact model and analyze the impact of key parameters on
negative capacitance FinFET (NC-FinFET) device operation. The developed model solves …
negative capacitance FinFET (NC-FinFET) device operation. The developed model solves …
Evaluation of NC-FinFET based subsystem-level logic circuits
This paper examines metal–ferroelectric–insulator–semiconductor negative-capacitance
FinFET (NC-FinFET) based VLSI subsystem-level logic circuits. For the first time, with the aid …
FinFET (NC-FinFET) based VLSI subsystem-level logic circuits. For the first time, with the aid …
Current-voltage model for negative capacitance field-effect transistors
In this letter, a semi-analytical current-voltage model for a negative capacitance field-effect
transistor (NCFET) with a ferroelectric material (ie, BaTiO 3) is proposed. Surface potential …
transistor (NCFET) with a ferroelectric material (ie, BaTiO 3) is proposed. Surface potential …
Design and analysis of GaSb/Si based negative capacitance TFET at the device and circuit level
In this paper, the design and performance analysis of GaSb/Si-based Negative Capacitance
(NC) Tunnel Field Effect Transistor (TFET) are comparatively analyzed at both device and …
(NC) Tunnel Field Effect Transistor (TFET) are comparatively analyzed at both device and …