High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes
We report on the growth of Si-doped homoepitaxial β-Ga 2 O 3 thin films on (010) Ga 2 O 3
substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium …
substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium …
Simultaneous drive-in of Mg and disassociation of Mg-H complex in Ga2O3 by oxygen annealing achieving remarkable current blocking
In order to increase the concentration of Mg in single crystal and epitaxial Ga 2 O 3 solely via
diffusion doping technique, different variations of diffusion methods are explored. First, a one …
diffusion doping technique, different variations of diffusion methods are explored. First, a one …
Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication
X Xu, D Chen, Y Lu, T Li, X Han, D Chen, H Qi… - Applied Physics …, 2024 - pubs.aip.org
In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga 2 O 3 current blocking
layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial …
layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial …
High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique
This study presents a β-Ga 2 O 3 Schottky barrier diode (SBD) with a Mg current blocking
layer (Mg-CBL) fabricated via the Mg-doped spin-on-glass (Mg-SOG) technique, affording a …
layer (Mg-CBL) fabricated via the Mg-doped spin-on-glass (Mg-SOG) technique, affording a …
LPCVD Grown Si-Doped -GaO Films with Promising Electron Mobilities
SA Khan, A Ibreljic, S Margiotta… - arXiv preprint arXiv …, 2024 - arxiv.org
We systematically investigated the growth of Si-doped $\beta $-Ga $ _2 $ O $ _3 $ films
using LPCVD system, achieving high electron mobilities of 162 cm $^ 2$/Vs and 149 cm …
using LPCVD system, achieving high electron mobilities of 162 cm $^ 2$/Vs and 149 cm …
[PDF][PDF] FangZhou Du; ChenKai Deng; JiaQi He; Yi Zhang; WenYue Yu; Qing Wang; HongYu Yu
MH He - Appl. Phys. Lett, 2024 - researchgate.net
This study presents a b-Ga2O3 Schottky barrier diode (SBD) with a Mg current blocking
layer (Mg-CBL) fabricated via the Mg-doped spinon-glass (Mg-SOG) technique, affording a …
layer (Mg-CBL) fabricated via the Mg-doped spinon-glass (Mg-SOG) technique, affording a …