Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics
by utilizing the spin degree of freedom for memory, storage and computing applications …

Spin-polarized antiferromagnets have recently gained significant interest because they
combine the advantages of both ferromagnets (spin polarization) and antiferromagnets …

Antiferromagnetic spintronics have attracted wide attention due to its great potential in
constructing ultradense and ultrafast antiferromagnetic memory that suits modern high …

Ferromagnets are known to support spin-polarized currents that control various spin-
dependent transport phenomena useful for spintronics. On the contrary, fully compensated …

Spatial, momentum and energy separation of electronic spins in condensed-matter systems
guides the development of new devices in which spin-polarized current is generated and …

Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

Spin splitting plays a pivotal role in most modern spintronic effects. Conventionally, spin
splitting accompanied by macroscopic magnetic moments has been typically discussed in …

Using first-principles quantum-transport calculations, we investigate spin-dependent
electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that …

The emergence of nonrelativistic band spin splitting in fully compensated collinear
antiferromagnets provides an intriguing platform for investigating nontrivial spin-dependent …

Antiferromagnetic spintronics, shows great potential for high-density and ultrafast
information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component …