Analysis of the current transport characteristics (CTCs) in the Au/n-Si Schottky diodes (SDs) with Al2O3 interfacial layer over wide temperature range
A Buyukbas-Ulusan, A Tataroglu… - ECS Journal of Solid …, 2023 - iopscience.iop.org
Temperature dependent electrical-parameters and CTCs in Au/Al 2 O 3/n-Si SDs have been
analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the …
analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the …
The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80 …
We analyzed current conduction mechanisms (CCMs) of the (Au/Ti)/Al 2 O 3/n-GaAs (MIS)
type SBDs in the wide temperature range (80–380 K) by 30 K steps using reverse bias …
type SBDs in the wide temperature range (80–380 K) by 30 K steps using reverse bias …
Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition
H Altuntas, K Kaplan - Materials Science in Semiconductor Processing, 2018 - Elsevier
In the present work, aluminum oxide (Al 2 O 3) thin films were deposited on p-type silicon
substrates by thermal atomic layer deposition technique. The structural properties of as …
substrates by thermal atomic layer deposition technique. The structural properties of as …
Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation
HP Zhu, ZS Zheng, B Li, BH Li, GP Zhang… - Semiconductor …, 2018 - iopscience.iop.org
In our work, insights into the total dose response and native point defect behavior in the Al 2
O 3 gate dielectric during irradiation were gained by gamma-ray irradiation experiments and …
O 3 gate dielectric during irradiation were gained by gamma-ray irradiation experiments and …
~ 3-nm ZnO nanoislands deposition and application in charge trapping memory grown by single ALD step
Low-dimensional semiconductor nanostructures are of great interest in high performance
electronic and photonic devices. ZnO is considered to be a multifunctional material due to its …
electronic and photonic devices. ZnO is considered to be a multifunctional material due to its …
The evaluation of the Al/ZnO/Si/Al heterojunction diode current-conducting mechanisms
M Benhaliliba - International Journal of Modern Physics B, 2024 - World Scientific
This work focuses on the electrical transport and conduction mechanisms—inside a sprayed—
made zinc oxide-on-p-type silicon junction device. A fabricated Al/ZnO/Si/Al heterojunction is …
made zinc oxide-on-p-type silicon junction device. A fabricated Al/ZnO/Si/Al heterojunction is …
Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions
J Zhang, X Chen, L Wang, ZS Zheng, HP Zhu… - Journal of Applied …, 2019 - pubs.aip.org
The radiation effects of metal-oxide-semiconductor (MOS) capacitors based on an Al 2 O 3
gate dielectric were studied using 30 MeV Si heavy ions. To give insights into the types of …
gate dielectric were studied using 30 MeV Si heavy ions. To give insights into the types of …
Leakage current and dielectric breakdown in lanthanum doped amorphous aluminum oxide films prepared by sol–gel
P Zou, M Yao, J Chen, Y Peng, X Yao - Ceramics International, 2016 - Elsevier
Abstract Dielectric Al 2− 2x La 2x O 3 (x= 0.00, 0.005, 0.02, 0.05, and 0.10) thin films were
fabricated on Pt/Ti/SiO 2/Si substrates by sol–gel spin coating. The surface morphology of Al …
fabricated on Pt/Ti/SiO 2/Si substrates by sol–gel spin coating. The surface morphology of Al …
The electrons' journey in thick metal oxides
Originally introduced in electronic manufacturing to replace the SiO 2 insulating layer, metal
oxides are now extensively used in a multitude of electronic devices. Understanding charge …
oxides are now extensively used in a multitude of electronic devices. Understanding charge …
3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric
MI Idris, AB Horsfall - Materials Science in Semiconductor Processing, 2021 - Elsevier
This paper reports on the first investigation of the characteristics of 3D structures formed in
silicon carbide for the realisation of ultra-high performance nanoscale transistors, based on …
silicon carbide for the realisation of ultra-high performance nanoscale transistors, based on …