Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …

In this work we have analyzed the doping, passivation and contact properties of boron-
doped (p+) polysilicon (poly-Si) layers to understand the two key limiting factors for industrial …

B migration in Si and Ge matrices raised a vast attention because of its influence on the
production of confined, highly p-doped regions, as required by the miniaturization trend. In …

Doped silicon quantum dots (SiQDs) with defined size, dopant distribution, and surface
chemistry are highly sought after as a scientific curiosity because their unique properties …

An effective method to generate traps at the interface was developed to enhance the charge
trapping capability of HfO 2/Al 2 O 3 multilayered memory devices. A high charge density …

High doping regimes of B implanted Ge have been accurately characterized combining Hall
effect technique and nuclear reaction analysis. Preamorphized Ge was implanted with B at …

We present in-situ self-diffusion experiments in solids, which were carried out by Focussing
Neutron Reflectometry on isotope multilayers. This new approach offers the following …

The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on
Si 29/Si nat heterostructures using neutron reflectometry and secondary ion mass …

Anomalous impurity redistribution after a laser irradiation process in group-IV elements has
been<? format?> reported in numerous papers. In this Letter, we correlate this still …

Recent experimental results on self-diffusion (SD) in amorphous silicon (a-Si)[Kirschbaum et
al., Phys. Rev. Lett. 120, 225902 (2018)] indicate that the atomic mechanism of this process …