Resistive switching in silicon suboxide films
We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM)
device in which the active layer is silicon-rich silica. The resistive switching phenomenon is …
device in which the active layer is silicon-rich silica. The resistive switching phenomenon is …
Visible and infra-red light emission in boron-doped wurtzite silicon nanowires
Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for
optoelectronic applications owing to its indirect electronic band gap, which limits its …
optoelectronic applications owing to its indirect electronic band gap, which limits its …
Defect study of phosphorous doped a-Si: H thin films using cathodoluminescence, IR and Raman spectroscopy
The phosphorous (P) doping induced defects and deviation in microstructural properties of a-
Si: H films have been investigated by Infrared (IR), Raman and Cathodoluminescence (CL) …
Si: H films have been investigated by Infrared (IR), Raman and Cathodoluminescence (CL) …
On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR-PECVD
A Podhorodecki, G Zatryb, LW Golacki… - Nanoscale research …, 2013 - Springer
Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er 3+ ions
have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor …
have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor …
Influence of the ratio of rare earth oxyorthosilicate R2SiO5 (R= La, Y) hosts on the structure and optical properties of co-doped Pr3+/Dy3+ phosphors
Abstract Praseodymium (Pr 3+) and dysprosium (Dy 3+) co-doped mixed lanthanum/yttrium
oxyorthosilicates (La 2-x Y x SiO 5, x= 0.5, 1 and 2) phosphors were synthesized using urea …
oxyorthosilicates (La 2-x Y x SiO 5, x= 0.5, 1 and 2) phosphors were synthesized using urea …
Local analysis of Eu2+ emission in CaAlSiN3
B Dierre, T Takeda, T Sekiguchi… - … and Technology of …, 2013 - iopscience.iop.org
We have investigated the local luminescence properties of Eu-doped CaAlSiN 3 by using
low-energy electron beam (e-beam) techniques. The particles yield broad emission …
low-energy electron beam (e-beam) techniques. The particles yield broad emission …
Thickness-dependent optimization of Er3+ light emission from silicon-rich silicon oxide thin films
This study investigates the influence of the film thickness on the silicon-excess-mediated
sensitization of Erbium ions in Si-rich silica. The Er 3+ photoluminescence at 1.5 μm …
sensitization of Erbium ions in Si-rich silica. The Er 3+ photoluminescence at 1.5 μm …
The peculiarities of structural and optical properties of HfO2-based films co-doped with silicon and erbium
L Khomenkova, N Korsunska, C Labbé, X Portier… - Applied Surface …, 2019 - Elsevier
The effect of deposition conditions and further annealing treatment on microstructure and
optical properties of (Si, Er)-codoped HfO 2 thin films is investigated. The films are grown on …
optical properties of (Si, Er)-codoped HfO 2 thin films is investigated. The films are grown on …
Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes
A Anopchenko, A Tengattini, A Marconi… - Journal of Applied …, 2012 - pubs.aip.org
High quantum efficiency erbium doped silicon nanocluster (Si-NC: Er) light emitting diodes
(LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a …
(LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a …
Cathodoluminescence and photoluminescence comparative study of erbium-doped silicon-rich silicon oxide
We present a study on erbium (Er)-doped silicon (Si)-rich silicon oxide thin films grown by
the magnetron cosputtering of three confocal cathodes according to the deposition …
the magnetron cosputtering of three confocal cathodes according to the deposition …