The discovery of two‐dimensional (2D) materials with unique electronic, superior
optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of …

In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue
to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited …

The compelling demand for higher performance and lower power consumption in electronic
systems is the main driving force of the electronics industry's quest for devices and/or …

The fast growth of information technology has been sustained by continuous scaling down of
the silicon-based metal–oxide field-effect transistor. However, such technology faces two …

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply
voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in …

For more than four decades, transistors have been shrinking exponentially in size, and
therefore the number of transistors in a single microelectronic chip has been increasing …

Steep subthreshold swing transistors based on interband tunneling are examined toward
extending the performance of electronics systems. In particular, this review introduces and …

We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has
a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental …

The burgeoning 2D semiconductors can maintain excellent device electrostatics with an
ultranarrow channel length and can realize tunneling by electrostatic gating to avoid …

In this paper, the historical effects and benefits of Moore's law for semiconductor
technologies are reviewed, and it is offered that the rapid learning curve obtained to the …