A carrier-storage-enhanced superjunction (SJ) insulated gate bipolar transistor (CSE-SJ-
IGBT) is proposed and investigated. In the CSE-SJ-IGBT, the p-pillar is connected to the …

In this brief, a novel superjunction (SJ)-insulated-gate bipolar transistor (SJ-IGBT) is
proposed and investigated by simulation, where a floating N-base region on the P-pillar …

In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated
gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are …

Compared with the discrete insulated gate bipolar transistor (IGBT), the silicon-on-insulator
lateral IGBT (SOI-LIGBT) owns the advantage of being integrated with peripheral circuits …

In this work, a stepped split trench-gate (SSG) insulated-gate bipolar transistor (IGBT)
employing enhanced carrier storage (CS) technique is proposed. The trench gate is split into …

A superjunction insulated gate bipolar transistor (SJ-IGBT) featuring a self-adaptive hole-
extracting (SAHE) path is proposed and investigated by simulation. The SAHE path is …

An oppositely doped islands insulated gate bipolar transistor (ODI-IGBT) is investigated for
the first time. By adding one or several ODIs in the drift longitudinally equidistantly, the ODI …

This paper studies the short-circuit safe operating area (SCSOA) of the conventional field-
stop (FS) IGBT and the superjunction (SJ) FS IGBT, based on 1200 V-rated samples, with …

A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor
(SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic …

A novel full turn-on RC-IGBT with ultralow energy loss is proposed and investigated by
simulations. It features a “collector-side” semi-superjunction (CSJ) and a shorted collector …