[HTML][HTML] Neuromorphic computing for smart agriculture
S Lu, X Xiao - Agriculture, 2024 - mdpi.com
Neuromorphic computing has received more and more attention recently since it can
process information and interact with the world like the human brain. Agriculture is a …
process information and interact with the world like the human brain. Agriculture is a …
[HTML][HTML] Quantum Dots for Resistive Switching Memory and Artificial Synapse
G Kim, S Park, S Kim - Nanomaterials, 2024 - mdpi.com
Memristor devices for resistive-switching memory and artificial synapses have emerged as
promising solutions for overcoming the technological challenges associated with the von …
promising solutions for overcoming the technological challenges associated with the von …
Influence of point defects on charge transport in nickel ferrite NiFe2O4
The paper considers electronic structure of pristine and defective nickel ferrite (spinel Ni Fe
2 O 4). The orbital ordering, band gap and charge transfer are studied in the framework of …
2 O 4). The orbital ordering, band gap and charge transfer are studied in the framework of …
[HTML][HTML] Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor
AS Chabungbam, D Kim, Y Wang, KM Kang… - Applied Surface Science …, 2025 - Elsevier
Zinc oxide (ZnO) is widely employed for multifunctional applications, including memristors,
and has garnered substantial interest for its potential applications in next-generation …
and has garnered substantial interest for its potential applications in next-generation …
Enhancing the nonvolatile properties of sol-gel-processed Y2O3 RRAM devices by suppressing oxygen vacancy formation
In this study, Y 2 O 3-based resistive random-access memory (RRAM) devices with an Ag/Y
2 O 3/indium tin oxide structure are fabricated on a glass substrate via sol-gel processing …
2 O 3/indium tin oxide structure are fabricated on a glass substrate via sol-gel processing …
Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au–Co3O4 Thin-Film …
C Yao, J Li, H Zhang, T Tian - ACS omega, 2024 - ACS Publications
Nanocrystalline Au–Co3O4 thin films were fabricated through a facile solution-processing
method, and voltage-polarity-dependent resistive switching (RS) characteristics including …
method, and voltage-polarity-dependent resistive switching (RS) characteristics including …
Demonstration of bipolar resistive memory fabricated using an ultra-thin BaTiOx resistive switching layer with a thickness of∼ 5 nm
CC Hsu, WC Wu, ZK Xiao, WC Jhang, ZR Qiu… - Physica B: Condensed …, 2025 - Elsevier
In this study, a high-performance non-volatile bipolar resistive random-access memory
(RRAM), which was fabricated using an ultra-thin barium titanate (BaTiO x, BTO) film as a …
(RRAM), which was fabricated using an ultra-thin barium titanate (BaTiO x, BTO) film as a …
[HTML][HTML] Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices
Strain engineering provides an attractive approach to enhance device performance by
modulating the intrinsic electrical properties of materials. This is especially applicable to 2D …
modulating the intrinsic electrical properties of materials. This is especially applicable to 2D …