Area-selective atomic layer deposition (AS-ALD) offers complementary bottom-up patterning
with atomic-level accuracy on pre-defined areas in conjunction with conventional top-down …

The focus of this study was to demonstrate the vapor-phase halogenation of Si (100) and
subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer …

Atomic layer deposition (ALD) is an advanced technology that can be used to deposit
extremely thin and conformal films of iridium (Ir). However, ALD techniques for Ir coating are …

We comparatively investigate inhibitory efficacy of four different phosphonic acid (PA) SAMs,
octadecylphosphonic acid (ODPA), octylphosphonic acid (OPA), ethylphosphonic acid …

Herein, low-resistivity Ru metal films were fabricated via atomic layer deposition (ALD) using
dicarbonyl-bis (5-methyl-2, 4-hexanediketonato) Ru (II) and O 2 as the Ru precursor and co …

As semiconductor devices become miniaturized, the importance of the molecular-level
understanding of the fabrication processes is growing. Titanium nitride (TiN) is an important …

Area selective deposition, which streamlines fabrication steps by enhancing precision and
reliability, represents a cutting-edge, bottom-up atomic and close-to-atomic scale …

Area-selective atomic layer deposition (AS-ALD) is a bottom-up fabrication technique that
may revolutionize the semiconductor manufacturing process. Because the efficiency and …

In semiconductor production, the technology node of a device is becoming extremely small
below 5 nm. Area selective deposition (ASD) is a promising technique for creating improved …

Achieving facile nucleation of noble metal films through atomic layer deposition (ALD) is
extremely challenging. To this end, η4‐2, 3‐dimethylbutadiene ruthenium (0) tricarbonyl (Ru …