Owing to their high integration and functionality, nanometer-scale optoelectronic devices
based on III-V semiconductor materials are emerging as an enabling technology for fiber …

In this article, recent developments in the lattice‐mismatched epitaxy of InAs on (111) A‐
oriented substrates and related research topics, in which the presence or absence of the …

We demonstrate a new quantum-confined semiconductor material based on GaSb quantum
dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched …

High-quality quantum light sources are crucial components for the implementation of
practical and reliable quantum technologies. The persistent challenge, however, is the lack …

The efficient generation of entangled photons at telecom wavelength is essential for the
success of many quantum communication protocols and the development of fiber-based …

We demonstrated nanopit formation by Ga-assisted local droplet etching technique in
InGaAs metamorphic layers grown on vicinal GaAs (111) A substrates. We studied nanopit …

We investigate in detail the role of strain relaxation and capping overgrowth in the self-
assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In …

The growth of InAs quantum dots (QDs) by droplet epitaxy (DE) in metal–organic vapor
phase epitaxy is demonstrated for the first time on an InGaAsP layer lattice matched to InP …

We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs
metamorphic buffer layers on 2∘-off GaAs (111) A substrates using molecular beam epitaxy …

Quantum photonic applications, such as photonic quantum computing, quantum
communication, and quantum sensing, require highly sophisticated nonclassical light …