Security of IoT systems: Design challenges and opportunities

T Xu, JB Wendt, M Potkonjak - 2014 IEEE/ACM International …, 2014 - ieeexplore.ieee.org
Computer-aided design (CAD), in its quest to facilitate new design revolutions, is again on
the brink of changing its scope. Following both historical and recent technological and …

[HTML][HTML] Radiative sky cooling: fundamental physics, materials, structures, and applications

X Sun, Y Sun, Z Zhou, MA Alam, P Bermel - Nanophotonics, 2017 - degruyter.com
Radiative sky cooling reduces the temperature of a system by promoting heat exchange with
the sky; its key advantage is that no input energy is required. We will review the origins of …

Analog Circuits and Signal Processing

M Ismail, M Sawan - 2013 - Springer
Today, micro-electronic circuits are undeniably and ubiquitously present in our society.
Transportation vehicles such as cars, trains, buses, and airplanes make abundant use of …

[图书][B] Counterfeit integrated circuits

M Tehranipoor, U Guin, D Forte, M Tehranipoor, U Guin… - 2015 - Springer
Counterfeit integrated circuits (ICs) pose a major concern to the industry and government as
they potentially impact the security and reliability of a wide variety of electronic systems. A …

Modeling and minimization of PMOS NBTI effect for robust nanometer design

R Vattikonda, W Wang, Y Cao - Proceedings of the 43rd annual Design …, 2006 - dl.acm.org
Negative bias temperature instability (NBTI) has become the dominant reliability concern for
nanoscale PMOS transistors. In this paper, a predictive model is developed for the …

Negative bias temperature instability: What do we understand?

DK Schroder - Microelectronics Reliability, 2007 - Elsevier
We present a brief overview of negative bias temperature instability (NBTI) commonly
observed for in p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) …

Predictive modeling of the NBTI effect for reliable design

S Bhardwaj, W Wang, R Vattikonda… - IEEE Custom …, 2006 - ieeexplore.ieee.org
This paper presents a predictive model for the negative bias temperature instability (NBTI) of
PMOS under both short term and long term operation. Based on the reaction-diffusion (RD) …

The negative bias temperature instability in MOS devices: A review

JH Stathis, S Zafar - Microelectronics Reliability, 2006 - Elsevier
Negative bias temperature instability (NBTI), in which interface traps and positive oxide
charge are generated in metal–oxide–silicon (MOS) structures under negative gate bias, in …

Compact modeling and simulation of circuit reliability for 65-nm CMOS technology

W Wang, V Reddy, AT Krishnan… - … on Device and …, 2007 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are the leading
reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC …

The impact of NBTI effect on combinational circuit: Modeling, simulation, and analysis

W Wang, S Yang, S Bhardwaj… - … Transactions on Very …, 2009 - ieeexplore.ieee.org
Negative-bias-temperature instability (NBTI) has become the primary limiting factor of circuit
life time. In this paper, we develop a hierarchical framework for analyzing the impact of NBTI …