Security of IoT systems: Design challenges and opportunities
Computer-aided design (CAD), in its quest to facilitate new design revolutions, is again on
the brink of changing its scope. Following both historical and recent technological and …
the brink of changing its scope. Following both historical and recent technological and …
[HTML][HTML] Radiative sky cooling: fundamental physics, materials, structures, and applications
Radiative sky cooling reduces the temperature of a system by promoting heat exchange with
the sky; its key advantage is that no input energy is required. We will review the origins of …
the sky; its key advantage is that no input energy is required. We will review the origins of …
[图书][B] Counterfeit integrated circuits
Counterfeit integrated circuits (ICs) pose a major concern to the industry and government as
they potentially impact the security and reliability of a wide variety of electronic systems. A …
they potentially impact the security and reliability of a wide variety of electronic systems. A …
Modeling and minimization of PMOS NBTI effect for robust nanometer design
R Vattikonda, W Wang, Y Cao - Proceedings of the 43rd annual Design …, 2006 - dl.acm.org
Negative bias temperature instability (NBTI) has become the dominant reliability concern for
nanoscale PMOS transistors. In this paper, a predictive model is developed for the …
nanoscale PMOS transistors. In this paper, a predictive model is developed for the …
Negative bias temperature instability: What do we understand?
DK Schroder - Microelectronics Reliability, 2007 - Elsevier
We present a brief overview of negative bias temperature instability (NBTI) commonly
observed for in p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) …
observed for in p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) …
Predictive modeling of the NBTI effect for reliable design
S Bhardwaj, W Wang, R Vattikonda… - IEEE Custom …, 2006 - ieeexplore.ieee.org
This paper presents a predictive model for the negative bias temperature instability (NBTI) of
PMOS under both short term and long term operation. Based on the reaction-diffusion (RD) …
PMOS under both short term and long term operation. Based on the reaction-diffusion (RD) …
The negative bias temperature instability in MOS devices: A review
JH Stathis, S Zafar - Microelectronics Reliability, 2006 - Elsevier
Negative bias temperature instability (NBTI), in which interface traps and positive oxide
charge are generated in metal–oxide–silicon (MOS) structures under negative gate bias, in …
charge are generated in metal–oxide–silicon (MOS) structures under negative gate bias, in …
Compact modeling and simulation of circuit reliability for 65-nm CMOS technology
W Wang, V Reddy, AT Krishnan… - … on Device and …, 2007 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are the leading
reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC …
reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC …
The impact of NBTI effect on combinational circuit: Modeling, simulation, and analysis
W Wang, S Yang, S Bhardwaj… - … Transactions on Very …, 2009 - ieeexplore.ieee.org
Negative-bias-temperature instability (NBTI) has become the primary limiting factor of circuit
life time. In this paper, we develop a hierarchical framework for analyzing the impact of NBTI …
life time. In this paper, we develop a hierarchical framework for analyzing the impact of NBTI …