Dielectrics for two-dimensional transition-metal dichalcogenide applications

CS Lau, S Das, IA Verzhbitskiy, D Huang, Y Zhang… - ACS …, 2023 - ACS Publications
Despite over a decade of intense research efforts, the full potential of two-dimensional
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …

Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics

S Valasa, VR Kotha, N Vadthiya - Materials Science in Semiconductor …, 2024 - Elsevier
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …

Ultra‐Steep‐Slope and High‐Stability of CuInP2S6/WS2 Ferroelectric Negative Capacitor Transistors by Passivation Effect and Dual‐Gate Modulation

L Zhao, Y Liang, J Ma, Z Pan, X Liu… - Advanced Functional …, 2023 - Wiley Online Library
Ferroelectric negative capacitance transistors (Fe‐NCFETs) have emerged as a promising
technology for low‐power electronics and have the potential to continue Moore's law …

Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

D Daw, H Bouzid, M Jung, D Suh, C Biswas… - Advanced …, 2024 - Wiley Online Library
Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by
efficient modulation of surface potential in transistors. While negative‐capacitance transition …

WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications

X Wu, S Gao, L Xiao, J Wang - ACS Applied Materials & Interfaces, 2024 - ACS Publications
Field-effect transistor (FET) biosensors based on two-dimensional (2D) materials are highly
sought after for their high sensitivity, label-free detection, fast response, and ease of on-chip …

Large-Area MoS2 Nanosheets with Triangular Nanopore Arrays as Active and Robust Electrocatalysts for Hydrogen Evolution

A Bala, A Sen, YH Kim, YM Kim, S Gandla… - The Journal of …, 2022 - ACS Publications
Molybdenum disulfide (MoS2), a transition metal dichalcogenide, has been demonstrated as
a promising substitute for noble metal catalysts in the hydrogen evolution reaction (HER) …

Strong piezoelectricity of the nm-thick flexible Hf0. 5Zr0. 5O2 ferroelectric film

N Liu, X Zhang, Y Ding, Y Wang, X Lu, G Yuan… - Journal of Alloys and …, 2023 - Elsevier
Integrated nanoelectromechanical systems (NEMS) exhibit enormous potential for replacing
current microelectromechanical systems in various fields, such as 5G/6G wireless …

Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware

D Joksas, AA AlMutairi, O Lee… - Advanced Intelligent …, 2022 - Wiley Online Library
In a data‐driven economy, virtually all industries benefit from advances in information
technology—powerful computing systems are critically important for rapid technological …

[HTML][HTML] Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic …

LA Dinu, C Romanitan, M Aldrigo, C Parvulescu… - Materials & Design, 2023 - Elsevier
This paper presents the area-selective wet etching (ASWE) method as a novel approach to
have a selective patterning of a 6.8 nm-thick zirconium-doped hafnium oxide (HZO) thin film …

A MoS2 Hafnium Oxide Based Ferroelectric Encoder for Temporal‐Efficient Spiking Neural Network

YC Chien, H Xiang, Y Shi, NT Duong, S Li… - Advanced …, 2023 - Wiley Online Library
Spiking neural network (SNN), where the information is evaluated recurrently through
spikes, has manifested significant promises to minimize the energy expenditure in data …