Proposal of ferroelectric based electrostatic doping for nanoscale devices
A ferroelectric based electrostatic doping (Fe-ED) technique is proposed, as the alternative
to chemical doping, providing non-volatile and programmable free electrons and holes for …
to chemical doping, providing non-volatile and programmable free electrons and holes for …
Compact modeling of surface potential, drain current and terminal charges in negative capacitance nanosheet FET including quasi-ballistic transport
In this article, we propose a compact model for Negative Capacitance Nanosheet Field
Effect Transistor (NC-NSFET) including quasi-ballistic transport for sub-7nm technology …
Effect Transistor (NC-NSFET) including quasi-ballistic transport for sub-7nm technology …
Unified compact model for nanowire transistors including quantum effects and quasi-ballistic transport
A Dasgupta, A Agarwal… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
We present a surface potential-based compact model for nanowire FETs, which considers 1-
D electrostatics along with the effect of multiple energy subbands. The model is valid for any …
D electrostatics along with the effect of multiple energy subbands. The model is valid for any …
Compact modeling of cross-sectional scaling in gate-all-around FETs: 3-D to 1-D transition
We model the effects of cross-sectional radius scaling on–and–characteristics of gate-all-
around FETs (GAAFETs), capturing the continuous transition from a 3-D electron system to a …
around FETs (GAAFETs), capturing the continuous transition from a 3-D electron system to a …
A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime
VR Murnal, C Vijaya - Nano Convergence, 2019 - Springer
This paper presents a physically valid quasi-ballistic drain current model applicable for
nanoscale symmetric Double Gate (SDG) MOSFETs. The proposed drain current model …
nanoscale symmetric Double Gate (SDG) MOSFETs. The proposed drain current model …
An improved model for quasi-ballistic transport in MOSFETs
A Dasgupta, A Agarwal… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
We have already presented a compact model for FETs operating in the quasi-ballistic
regime [1]. However, this model suffers from two important problems: 1) the profile for charge …
regime [1]. However, this model suffers from two important problems: 1) the profile for charge …
An optimized nanoscale Quasi-Ballistic DG MOSFET model with diffusive carrier scattering dependency
VR Murnal - International Journal of Electronics, 2023 - Taylor & Francis
The work proposes a physically accurate quasi-ballistic drain current model valid for Double
Gate (DG) MOSFETs in the nanoscale regime. The proposed quasi-ballistic model considers …
Gate (DG) MOSFETs in the nanoscale regime. The proposed quasi-ballistic model considers …
A Physics-Based Compact Model for Silicon Cold-Source Transistors
A Kar, K Nandan, YS Chauhan - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
Silicon-based cold-source transistors are promising for energy-efficient logic switches and
hence for semiconductor technology node scaling due to their subthermal switching …
hence for semiconductor technology node scaling due to their subthermal switching …
Compact modeling of negative capacitance nanosheet FET including quasi-ballistic transport
In this paper, we propose a compact model for Negative Capacitance Nanosheet Field Effect
Transistor (NC-NSFET) including quasi-ballistic transport for sub-7nm technology node. The …
Transistor (NC-NSFET) including quasi-ballistic transport for sub-7nm technology node. The …
A Comparative Study of Short Channel Effects in 3-D FinFET with High-K Gate Di-electric
With the advancement of Semiconductor Technology, FinFET replaces MOSFET. It is one of
the frontier devices due to suppressed short channel effects, outstanding performance for …
the frontier devices due to suppressed short channel effects, outstanding performance for …