GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …

In this article, threading dislocations and its impact on the electrical and thermal
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …

We propose optimized field plate structures to improve the performance of AlGaN/GaN
HEMT under electrical stress. The two structures are T-gate AlGaN/GaN HEMT with dual …

In this study, a 60nm gate length double‐gate AlGaN/GaN/AlGaN metal‐oxide‐
semiconductor high‐electron‐mobility transistor (MOS‐HEMT) is proposed and different …

Abstract Gallium Nitride (GaN) high electron mobility transistors (HEMTs) have garnered
significant attention in micro/millimeter wave and terahertz technologies due to their unique …

In this study, a normally-off AlGaN/GaN metal–insulator-semiconductor high electron
mobility transistors (MIS-HEMTs) with p-GaN layer were processed, which possess a high …

In this letter, comprehensive static and dynamic electrical parameter degradations of p-GaN
gate high electron mobility transistor (HEMT) under repetitive short-circuit (SC) stresses are …

A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ
SiN x dielectric is presented. Effects of both negative and positive gate bias on threshold …

The dynamic ON-resistance (Ron) of p-GaN HEMTs was reduced using the dual field plate
(FP) structure combined with the source field plate (S-FP) and gate field plate (G-FP). The …