The properties of switching transient in the gallium arsenide photoconductive semiconductor
switch (GaAs PCSS) are significant for improving the device lifetime. In this article, the …

Generation of ultra-wideband microwave utilizing a low-energy-triggered bulk gallium
arsenide (GaAs) avalanche semiconductor switch with ultrafast switching is presented. The …

In this letter, the triggering efficiency of 1-mm-gap, opposed-contact GaAs Photoconductive
Semiconductor Switch (PCSS) is studied in avalanche mode. Compared with the anode …

Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor
switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using …

The switching mechanism and the thermal process of a gallium arsenide (GaAs)
photoconductive semiconductor switch (PCSS) with an opposed-contact is investigated by …

We present experimental evidence and physics-based simulations of the lock-on effect in
high-voltage GaAs avalanche diodes. The avalanche triggering is initiated by steep voltage …

This letter presents a low-energy-triggered bulk gallium arsenide (GaAs) avalanche
semiconductor switch with delayed breakdown. The actual optical energy contributing to …

The switching transient of gallium arsenide photoconductive semiconductor switch (GaAs
PCSS) undergoing the transition from linear mode to nonlinear mode is investigated based …

We present a comparative study of Si and GaAs high-voltage diodes operated in the
delayed impact ionization breakdown mode. We use an experimental setup that allows …

We present an investigation of a low-energy-triggered bulk gallium arsenide (GaAs)
photoconductive semiconductor switch (PCSS) that is characterized by powerful avalanche …