Monolithic interconnected modules (MIM) for high irradiance photovoltaic energy conversion: A comprehensive review
A Datas, PG Linares - Renewable and Sustainable Energy Reviews, 2017 - Elsevier
Abstract Monolithic Interconnected Modules (MIM) are densely packed arrays of series
interconnected photovoltaic (PV) cells that are manufactured on the same semiconductor …
interconnected photovoltaic (PV) cells that are manufactured on the same semiconductor …
Surface modification of pure aluminum via Ar ion bombardment for Al/Al solid-state diffusion bonding
Ar ion bombardment was applied to modify the aluminum surface and a subsequent solid-
state diffusion bonding was performed. The effect of Ar ion bombardment on surface …
state diffusion bonding was performed. The effect of Ar ion bombardment on surface …
Effects of surface activation time on Si-Si direct wafer bonding at room temperature
S Yang, Y Qu, N Deng, K Wang, S He… - Materials Research …, 2021 - iopscience.iop.org
Surface activated bonding (SAB) based on argon ion beam irradiation was used to directly
bond Si and Si wafers at room temperature, and the effects of the surface activation time on …
bond Si and Si wafers at room temperature, and the effects of the surface activation time on …
Development and analysis of wafer-bonded four-junction solar cells based on antimonides with 42% efficiency under concentration
The highest solar cell efficiencies today are reached with four-junction devices under
concentrated illumination. The optimal bandgap combination for realistic four-junction cells …
concentrated illumination. The optimal bandgap combination for realistic four-junction cells …
Hall characterization of epitaxial GaSb and AlGaAsSb layers using pn junctions on GaSb substrates
Abstract The Hall Van-der-Pauw method is widely used to assess the electrical properties of
GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and …
GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and …
Status of four-junction cell development at fraunhofer ISE
Four-junction solar cells are being developed for space applications as they promise higher
efficiencies compared to the present GaInP/GaInAs/Ge triple-junction industry standard …
efficiencies compared to the present GaInP/GaInAs/Ge triple-junction industry standard …
[HTML][HTML] Effects of thermal annealing on structural and electrical properties of surface-activated n-GaSb/n-GaInP direct wafer bonds
A study on the microstructure of argon-beam activated n-GaSb/n-Ga 0.32 In 0.68 P bond
interfaces is presented, focusing on the behavior of the bond upon thermal annealing and …
interfaces is presented, focusing on the behavior of the bond upon thermal annealing and …
[HTML][HTML] Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation
The authors present a low-temperature wafer bonding process for the formation of
electrically conductive n-GaSb/n-Ga 0.79 In 0.21 As and n-GaSb/n-Ga 0.32 In 0.68 P …
electrically conductive n-GaSb/n-Ga 0.79 In 0.21 As and n-GaSb/n-Ga 0.32 In 0.68 P …
以臭氧電漿活化表面強化異質晶圓鍵合之研究
HC Hu - 2016 - ir.lib.ncu.edu.tw
摘要(中) 晶圓鍵合技術的優勢, 在於可以將不同元件在高品質接合介面下結合在一起,
具有相當高的便利性與整合性. 然而, 不同材料之間存在熱膨脹係數差異 …
具有相當高的便利性與整合性. 然而, 不同材料之間存在熱膨脹係數差異 …
[PDF][PDF] ВЗАЄМОДІЯ InAs, InSb, GaAs, GaSb З ВОДНИМИ РОЗЧИНАМИ (NH4) 2Cr2O7− HBr− РОЗЧИННИК
ІВ Левченко - 2018 - chem.lnu.edu.ua
Встановлено закономірності хімічного розчинення напівпровідникових кристалів InAs,
InSb, GaAs, GaSb в бромвиділяючих травильних композиціях на основі (NH4) 2Cr2O7 …
InSb, GaAs, GaSb в бромвиділяючих травильних композиціях на основі (NH4) 2Cr2O7 …