Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

When growing a crystal, a planar front is desired for most of the applications. This plane
shape is often destroyed by instabilities of various types. In the case of growth from a …

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

The use of fractal concepts in understanding various growth phenomena, such as molecular
beam epitaxy (MBE) or fluid flow in porous media, is increasingly important these days. This …

Throughout its previous four editions, Combustion has made a very complex subject both
enjoyable and understandable to its student readers and a pleasure for instructors to teach …

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

Nanostructured materials may be defined as those materials whose structural elements-
clusters, crystallites or molecules-have dimensions in the 1 to 100 nm range. The explosion …

Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety
of materials, ranging from oxides to semiconductors to metals. It was first applied to the …

(Zn, Al) O thin films have been prepared by a dc reactive magnetron sputtering system with
the Al contents in a wide range of 0–50 at.%⁠. The structural, optical, and electrical …

Since the invention of the transistor in 1947, there has been a widespread and continuing
interest in understanding the physical and chemical properties of semiconductor surfaces. 1 …