Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

K Hoo Teo, Y Zhang, N Chowdhury… - Journal of Applied …, 2021 - pubs.aip.org
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

Microwave-optical quantum frequency conversion

X Han, W Fu, CL Zou, L Jiang, HX Tang - Optica, 2021 - opg.optica.org
Photons at microwave and optical frequencies are principal carriers for quantum information.
While microwave photons can be effectively controlled at the local circuit level, optical …

Epitaxial Growth of α‐FAPbI3 at a Well‐Matched Heterointerface for Efficient Perovskite Solar Cells and Solar Modules

Y Meng, Y Wang, C Liu, P Yan, K Sun… - Advanced …, 2024 - Wiley Online Library
Although the FAPbI3 perovskite system exhibits an impressive optoelectronic characteristic
and thermal stability because of its energetically unstable black phase at room temperature …

Synthesis of LaWN3 nitride perovskite with polar symmetry

KR Talley, CL Perkins, DR Diercks, GL Brennecka… - Science, 2021 - science.org
Oxide materials with the perovskite structure have been used in sensors and actuators for
half a century, and halide perovskites transformed photovoltaics research in the past …

ARQUIN: architectures for multinode superconducting quantum computers

J Ang, G Carini, Y Chen, I Chuang, M Demarco… - ACM Transactions on …, 2024 - dl.acm.org
Many proposals to scale quantum technology rely on modular or distributed designs
wherein individual quantum processors, called nodes, are linked together to form one large …

Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer

F Ren, B Liu, Z Chen, Y Yin, J Sun, S Zhang… - Science …, 2021 - science.org
Van der Waals epitaxy provides a fertile playground for the monolithic integration of various
materials for advanced electronics and optoelectronics. Here, a previously unidentified …

Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors

P Wang, D Wang, S Mondal, M Hu, Y Wu… - ACS Applied Materials …, 2023 - ACS Publications
Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …

Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

K Jiang, X Sun, Z Shi, H Zang, J Ben… - Light: Science & …, 2021 - nature.com
Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their
tunable wide band-gap, high breakdown field and energy density, excellent chemical and …

A transverse tunnelling field-effect transistor made from a van der Waals heterostructure

X Xiong, M Huang, B Hu, X Li, F Liu, S Li, M Tian… - Nature …, 2020 - nature.com
Semiconductor devices that rely on quantum tunnelling could be of use in logic, memory and
radiofrequency applications. Tunnel devices that exhibit negative differential resistance …

Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics

VJ Gokhale, BP Downey, DS Katzer, N Nepal… - Nature …, 2020 - nature.com
Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for
quantum information storage and processing by coupling acoustic phonon sources with …