Junctionless transistors: State-of-the-art
A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
An intensive study of tree-shaped JL-NSFET: digital and analog/RF perspective
This manuscript for the first time presents the digital and analog/RF performance analysis for
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …
Design and deep insights into sub-10 nm spacer engineered junctionless FinFET for nanoscale applications
N Vadthiya - ECS journal of solid state science and technology, 2021 - iopscience.iop.org
In this paper, we have studied the impact of various dielectric single-k (Sk) and dual-k (Dk)
spacers on optimized Junctionless (JL) FinFET at nano-regime by using hetero-dielectric …
spacers on optimized Junctionless (JL) FinFET at nano-regime by using hetero-dielectric …
Performance analysis of metal gate engineered junctionless nanosheet fet with a ft/fmax of 224/342ghz for beyond 5g (b5g) applications
This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …
Design insights into thermal performance of vertically stacked JL-NSFET with high-k gate dielectric for sub 5-nm technology node
Design Insights into Thermal Performance of Vertically Stacked JL-NSFET with High-k Gate
Dielectric for Sub 5-nm Technology Node - IOPscience Skip to content IOP Science home …
Dielectric for Sub 5-nm Technology Node - IOPscience Skip to content IOP Science home …
Performance evaluation of spacer dielectric engineered vertically stacked junctionless nanosheet FET for sub-5 nm technology node
This manuscript for the first time provides insights on the impact of different spacer materials
for the vertically stacked Junctionless Nanosheet Field Effect Transistor (JL-NSFET). The …
for the vertically stacked Junctionless Nanosheet Field Effect Transistor (JL-NSFET). The …
Optimization of gate-stack in junctionless Si-nanotube FET for analog/RF applications
In this work, gate-stack based junctionless Si-nanotube (JLSiNT) FET is studied to
investigate the effect of high-K gate dielectric material in-conjunction with interfacial layer …
investigate the effect of high-K gate dielectric material in-conjunction with interfacial layer …
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design
In order to achieve reliability improvement in metal–oxidesemiconductor field-effect
transistor (MOSFET), the asymmetric MOSFET has been proposed and investigated. The …
transistor (MOSFET), the asymmetric MOSFET has been proposed and investigated. The …
Analysis on DC and RF/analog performance in multifin-FinFET for wide variation in work function of metal gate
Y Hirpara, R Saha - Silicon, 2021 - Springer
It is well established that increase in number of fins improves the RF/Analog performances of
FinFET. In this paper, the effect of work function (ɸ M) of metal gate on transfer …
FinFET. In this paper, the effect of work function (ɸ M) of metal gate on transfer …
Effect of gate length on performance of 5nm node N-channel nano-sheet transistors for analog circuits
In this work, the effect of channel length on the performance of an N-channel Nano-sheet
Transistor (NST) for analog circuits has been investigated. A fully-calibrated TCAD platform …
Transistor (NST) for analog circuits has been investigated. A fully-calibrated TCAD platform …