Multidimensional device architectures for efficient power electronics
Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV
High-voltage vertical Ga 2 O 3 MISFETs are developed employing halide vapor phase
epitaxial (HVPE) layers on bulk Ga 2 O 3 (001) substrates. The low charge concentration of …
epitaxial (HVPE) layers on bulk Ga 2 O 3 (001) substrates. The low charge concentration of …
Gallium nitride vertical power devices on foreign substrates: a review and outlook
Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …
superior high-voltage and high-current capacity as well as easier thermal management than …
Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga's Figure-of-Merit of 0.6 GW/cm2
This letter demonstrates vertical Ga 2 O 3 Schottky barrier diodes (SBDs) with a novel edge
termination, the small-angle beveled field plate (SABFP), fabricated on thinned substrates …
termination, the small-angle beveled field plate (SABFP), fabricated on thinned substrates …
GaN FinFETs and trigate devices for power and RF applications: Review and perspective
Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability
This work describes the high-temperature performance and avalanche capability of normally-
off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors …
off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors …
Role of wide bandgap materials in power electronics for smart grids applications
J Ballestín-Fuertes, J Muñoz-Cruzado-Alba… - Electronics, 2021 - mdpi.com
At present, the energy transition is leading to the replacement of large thermal power plants
by distributed renewable generation and the introduction of different assets. Consequently, a …
by distributed renewable generation and the introduction of different assets. Consequently, a …