[HTML][HTML] Surface passivation approaches for silicon, germanium, and III–V semiconductors
RJ Theeuwes, WMM Kessels, B Macco - Journal of Vacuum Science & …, 2024 - pubs.aip.org
Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …
Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments
A silicon nitride (SiN x) film deposited at 500 C by plasma-enhanced atomic layer deposition
(PEALD) is employed as the gate dielectric for GaN-based metal-insulator-semiconductor …
(PEALD) is employed as the gate dielectric for GaN-based metal-insulator-semiconductor …
Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer
S Gao, Q Zhou, X Liu, H Wang - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
We propose two kinds of stacked materials that effectively yield low drain off-state leakage
current, high off-state breakdown voltage and low current collapse simultaneously in …
current, high off-state breakdown voltage and low current collapse simultaneously in …
Improvement of AlN film quality using plasma enhanced atomic layer deposition with substrate biasing
M Legallais, H Mehdi, S David, F Bassani… - … applied materials & …, 2020 - ACS Publications
In recent years, plasma enhanced atomic layer deposition (PEALD) has emerged as a key
method for the growth of conformal and homogeneous aluminum nitride (AlN) films at the …
method for the growth of conformal and homogeneous aluminum nitride (AlN) films at the …
600-V p-GaN gate HEMT with buried hole spreading channel demonstrating immunity against buffer trapping effects
J Yang, J Wei, Y Wu, M Nuo, Z Chen… - IEEE Electron …, 2022 - ieeexplore.ieee.org
A 600-V p-GaN gate HEMT with buried hole spreading channel (BHSC) is demonstrated to
suppress the buffer trap related dynamic degradation. The BHSC is located at the interface …
suppress the buffer trap related dynamic degradation. The BHSC is located at the interface …
Investigation of the Trap States and Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer
H Sun, M Wang, R Yin, J Chen, S Xue… - … on Electron Devices, 2019 - ieeexplore.ieee.org
A novel gate and passivation dielectric stack consisting of a thin metal-organic chemical
vapor deposition (MOCVD) grown in-situ Si 3 N 4 (3 nm) and a thick lowpressure chemical …
vapor deposition (MOCVD) grown in-situ Si 3 N 4 (3 nm) and a thick lowpressure chemical …
Characterization of deep and shallow traps in GaN HEMT using multi-frequency CV measurement and pulse-mode voltage stress
In this paper, the influence of interface traps at the SiN/GaN interface and carbon-related
buffer traps on GaN high electron mobility transistor (HEMT) on silicon substrate has been …
buffer traps on GaN high electron mobility transistor (HEMT) on silicon substrate has been …
O2 Plasma Alternately Treated ALD-Al2O3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs
Q Wang, M Pan, P Zhang, L Wang, Y Yang, X Xie… - IEEE …, 2023 - ieeexplore.ieee.org
This article systematically studies the AlGaN/GaN MIS-HEMTs using the O2 plasma
alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) …
alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) …
Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT
J Yang, J Wei, Y Wu, J Yu, J Cui, X Yang, X Liu… - Applied Physics …, 2024 - pubs.aip.org
The hot-electron-related reliability is an important issue for GaN power devices under harsh
operation condition or environment. These high-energy electrons can scatter toward the …
operation condition or environment. These high-energy electrons can scatter toward the …
Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: Correlating device …
In this work, the conduction mechanisms at the interface of AlN/SiN dielectric stacks with
AlGaN/GaN heterostructures have been studied combining different macroscopic and …
AlGaN/GaN heterostructures have been studied combining different macroscopic and …