Standards for the characterization of endurance in resistive switching devices
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …
applications in multiple types of integrated circuits, including electronic memories, true …
Semiconductor quantum dots for memories and neuromorphic computing systems
The continued growth in the demand of data storage and processing has spurred the
development of high-performance storage technologies and brain-inspired neuromorphic …
development of high-performance storage technologies and brain-inspired neuromorphic …
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
[HTML][HTML] Proximitized materials
Advances in scaling down heterostructures and having an improved interface quality
together with atomically thin two-dimensional materials suggest a novel approach to …
together with atomically thin two-dimensional materials suggest a novel approach to …
Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
The conduction mechanism of metal oxide resistive switching memory is debated in the
literature. We measured the IV characteristics below the switching voltages through TiN/HfO …
literature. We measured the IV characteristics below the switching voltages through TiN/HfO …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
In this study, resistive random-access memory (RRAM)-based crossbar arrays with a
memristor W/TiO 2/HfO 2/TaN structure were fabricated through atomic layer deposition …
memristor W/TiO 2/HfO 2/TaN structure were fabricated through atomic layer deposition …
Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory
R Zhang, H Huang, Q Xia, C Ye, X Wei… - Advanced Electronic …, 2019 - Wiley Online Library
Flexible memory is highly desirable for data storage in portable wearable electronics. Here,
a flexible bilayer TiO2/HfO2‐architecture‐based resistive random access memory (RRAM) is …
a flexible bilayer TiO2/HfO2‐architecture‐based resistive random access memory (RRAM) is …