Defect engineering for fuel‐cell electrocatalysts

W Li, D Wang, Y Zhang, L Tao, T Wang… - Advanced …, 2020 - Wiley Online Library
The commercialization of fuel cells, such as proton exchange membrane fuel cells and direct
methanol/formic acid fuel cells, is hampered by their poor stability, high cost, fuel crossover …

[HTML][HTML] Structural characterization of polycrystalline thin films by X-ray diffraction techniques

A Pandey, S Dalal, S Dutta, A Dixit - Journal of Materials Science: Materials …, 2021 - Springer
X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with
minimal sample preparation. XRD provides the first information about the materials phases …

Ti–Cr–N Nanopyramid/Nitrogen-Doped Carbon Quantum Dot/Stainless Steel Mesh as a Flexible Supercapacitor Electrode

R Kumar, B Ranjan, K Kumar… - ACS Applied Nano …, 2024 - ACS Publications
Nitrogen-doped carbon quantum dots (N-CQDs) incorporated into highly conductive
transition metal nitrides offer enhanced electrochemical performance, delivering a high …

Pseudocapacitance Powered Nickel Molybdenum Nitride Nanocomposite Reactively Cosputtered on Stainless-Steel Mesh toward Advanced Flexible Supercapacitors

B Ranjan, D Kaur - ACS Applied Energy Materials, 2024 - ACS Publications
Ternary transition metal nitrides are emerging pseudocapacitive materials for the
development of high-energy-density flexible supercapacitors. The present report …

Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT

K Narang, RK Bag, VK Singh, A Pandey… - Journal of Alloys and …, 2020 - Elsevier
AlGaN/GaN high electron mobility transistor (HEMT) epi-structures were grown on SiC
substrate using MOVPE. In this paper, the growth of high-quality AlGaN epi-layer in …

Atomic layer etching (ALE) of III-nitrides

WY Ho, YC Chow, Z Biegler, KS Qwah, T Tak… - Applied Physics …, 2023 - pubs.aip.org
Atomic layer etching (ALE) was performed on (Al, In, Ga) N thin films using a cyclic process
of alternating Cl 2 gas absorption and Ar+ ion bombardment in an inductively coupled …

Effect of two step GaN buffer on the structural and electrical characteristics in AlGaN/GaN heterostructure

A Pandey, VK Singh, S Dalal, RK Bag, K Narang… - Vacuum, 2020 - Elsevier
AlGaN/GaN hetero-structure based High electron mobility transistor (HEMT) is one of the
emerged electronic devices for high power and high frequency applications. In this report …

Recent progress of laser processing technology in micro-LED display manufacturing: A review

L Song, X Yong, P Zhang, S Song, K Chen… - Optics & Laser …, 2025 - Elsevier
Micro-LED undoubtedly stands out as a highly anticipated technology when it comes to the
innovation of future display technologies. Micro-LED technology surpasses traditional …

Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

V Aggarwal, C Ramesh, U Varshney, P Tyagi… - Applied Physics A, 2022 - Springer
We have studied the crystalline, optical and photo-response properties of epitaxial GaN films
grown on bare-and pre-nitridated a-sapphire substrates with different thicknesses of low …

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

K Woo, Z Bian, M Noshin, RP Martinez… - Journal of Physics …, 2024 - iopscience.iop.org
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …