The main motivation of this review is to study the evolution of first and second level of
interconnect materials used in memory device semiconductor packaging. Evolutions of …

Multi-material processing in selective laser melting (SLM) using AlSi10Mg and UNS C18400
copper alloy was carried out. The interfacial characteristics were analyzed with FIB, SEM …

Copper wire bonding of microelectronic parts has developed as a means to cut the costs of
using the more mature technology of gold wire bonding. However, with this new technology …

Chapter 1 gives an introduction to Cu wire bonding technology. The advantages of Cu over
Au, such as lower cost, higher mechanical strength, and higher electrical and thermal …

The interfacial microstructures of the Cu-wire bonding to an Al pad are investigated first by
using an X-ray microdiffractometer and high-resolution transmission electron microscopy. It …

The objective of this review is to study the evolution and key findings and critical technical
challenges, solutions and future trend of bonding wires used in semiconductor electronics …

In-situ transmission electron microscopy (TEM) is developed to observe the microstructure
evolution during ultrasonic bonding. It was found that many nanoparticles were generated …

Reverse engineering techniques of Cu wire bonding process used in manufacturing
microelectronic packing components are proposed for evaluating Cu-Al intermetallic …

In this paper, three Pd-coated Cu (PCC) wires with different Pd-layer thicknesses were used
to make bonding samples, and the influence of Pd-layer thickness on the reliability of …

Cu-wire overhang bonding process is investigated first by a high-speed camera system. It
was found that the greater impact, rebound, and deflection of overhang die during the Cu …