Device and circuit-level assessment of GaSb/Si heterojunction vertical tunnel-FET for low-power applications
This article investigates the performance of a vertically grown GaSb/Si tunnel field effect
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …
III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications
This article presents a comparative study on the performance characteristics of some vertical
tunnel field effect transistor (TFET): conventional all-Si TFET with pocket, In 0.53 Ga 0.47 …
tunnel field effect transistor (TFET): conventional all-Si TFET with pocket, In 0.53 Ga 0.47 …
Study the impact of graphene channel over conventional silicon on DC/analog and RF performance of DG dual-material-gate VTFET
B Choudhuri, B Bhowmick - Microelectronics Journal, 2022 - Elsevier
In this article, using a Silvaco TCAD simulator, the impact of Graphene Channel Double
Gate Dual Gate Material Vertical tunnel FET on the analog and RF application is studied. We …
Gate Dual Gate Material Vertical tunnel FET on the analog and RF application is studied. We …
Insights into the DC, RF/Analog and linearity performance of vertical tunneling based TFET for low-power applications
N Paras, SS Chauhan - Microelectronic Engineering, 2019 - Elsevier
The concept of dual metal and double gate in Vertical TFET is presented to show the
improvement of DC as well as analog/RF device performance standards due to enhanced …
improvement of DC as well as analog/RF device performance standards due to enhanced …
Performance analysis of germanium-silicon vertical tunnel field-effect transistors (Ge-Si-VTFETs) for analog/RF applications
K Ramkumar, VN Ramakrishnan - Silicon, 2022 - Springer
The performance analysis of Ge-Si-VTFETs for analog/RF applications has been studied in
this article under various gate dielectric materials. In the proposed device, Ge/Si materials …
this article under various gate dielectric materials. In the proposed device, Ge/Si materials …
Design and analysis of a dual gate tunnel FET with InGaAs source pockets for improved performance
In this work, we propose a novel dual gate tunnel FET (TFET) with an improved ON current.
The source pockets of the proposed TFET are designed with a narrow bandgap InGaAs …
The source pockets of the proposed TFET are designed with a narrow bandgap InGaAs …
Temperature sensitivity analysis of vertical tunneling based dual metal Gate TFET on analog/RF FOMs
N Paras, SS Chauhan - Applied Physics A, 2019 - Springer
In this paper, we present a rigorous numerical simulation study on temperature sensitivity for
tunnel field effect transistor (TFET). The presented temperature sensitivity analysis is studied …
tunnel field effect transistor (TFET). The presented temperature sensitivity analysis is studied …
Temperature sensitivity analysis of dual material stack gate oxide source dielectric pocket TFET
The variation of the temperature-dependent performance of an electronic device is one of
the major concerns in predicting the actual electrical characteristics of the device as the …
the major concerns in predicting the actual electrical characteristics of the device as the …
A theoretical investigation of mole fraction-based N+ pocket doped stack oxide TFET considering ideal conditions for reliability issues
KK Nigam - Microelectronics Reliability, 2024 - Elsevier
Nowadays, reliability towards the interface trap charges of the semiconductor device is a
major grave concern. Therefore, we introduce, for the first time, a theoretical investigation of …
major grave concern. Therefore, we introduce, for the first time, a theoretical investigation of …
Investigation of RF and linearity performance of electrode work‐function engineered HDB vertical TFET
S Narwal, SS Chauhan - Micro & Nano Letters, 2019 - Wiley Online Library
This work realises a hetero‐dielectric buried oxide vertical tunnel field effect transistor (HDB
VTFET) and investigates its radio frequency (RF) and linearity characteristics. First time, the …
VTFET) and investigates its radio frequency (RF) and linearity characteristics. First time, the …