Metal silicides in CMOS technology: Past, present, and future trends

SL Zhang, M Östling - Critical Reviews in Solid State and Materials …, 2003 - Taylor & Francis
Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …

Study of phase transformations in Co/CoCo2O4 nanowires

MV Zdorovets, AL Kozlovskiy - Journal of Alloys and Compounds, 2020 - Elsevier
The paper presents the results of a systematic study of the influence of thermal annealing on
changes in the structural properties and phase composition of metallic nanostructures based …

Extremely scaled silicon nano-CMOS devices

L Chang, Y Choi, D Ha, P Ranade… - Proceedings of the …, 2003 - ieeexplore.ieee.org
Silicon-based CMOS technology can be scaled well into the nanometer regime. High-
performance, planar, ultrathin-body devices fabricated on silicon-on-insulator substrates …

Thin film reaction of transition metals with germanium

S Gaudet, C Detavernier, AJ Kellock… - Journal of Vacuum …, 2006 - pubs.aip.org
A systematic study of the thermally induced reaction of 20 transition metals (Ti, Zr, Hf, V, Nb,
Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, and Cu) with Ge substrates was carried …

[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Investigation of phase transformations and corrosion resistance in Co/CoCo2O4 nanowires and their potential use as a basis for lithium-ion batteries

MV Zdorovets, AL Kozlovskiy - Scientific Reports, 2019 - nature.com
The paper is devoted to the study of the effect of thermal annealing on the change in the
structural properties and phase composition of metal Co nanostructures, as well as the …

Stability of C54 titanium germanosilicide on a silicon‐germanium alloy substrate

DB Aldrich, YL Chen, DE Sayers… - Journal of applied …, 1995 - pubs.aip.org
The stability of C54 Ti (Si,-, Ge,,), films in contact with Si,-XGe, substrates was investigated.
The C54 Ti (Si,-, Ge,, j, films were formed from the Ti-Sii-, Ge, solid phase metallization …

Silicide formation and stability of TiSiGe and CoSiGe

Z Wang, DB Aldrich, YL Chen, DE Sayers… - Thin Solid Films, 1995 - Elsevier
The formation and stability of the products of Ti and Co reacting with Si1− x Gex substrates
were investigated. For the Ti SiGe system, when a C54 Ti (Si1− yGey) 2 layer forms, the Ge …

Co–Ge compounds and their electrochemical performance as high-performance Li-ion battery anodes

DH Kim, CM Park - Materials Today Energy, 2020 - Elsevier
Abstract Representative Ge-rich binary Co–Ge compounds (CoGe, Co 5 Ge 7, and CoGe 2)
are synthesized by facile solid-state reactions and apply as Li-ion battery (LIB) anode …

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

K Opsomer, D Deduytsche, C Detavernier… - Applied physics …, 2007 - pubs.aip.org
A strong influence of substrate crystallinity is observed for thin-film Co∕ Ge reactions. For
the detected phases (CoGe, Co 5 Ge 7⁠, and Co Ge 2⁠), the formation temperatures on …