ABO 3 and A 1− x C x B 1− y D y (O 1− z E z) 3: review of experimental optimisation of thin film perovskites by high-throughput evaporative physical vapour deposition
S Guerin, BE Hayden - Chemical Communications, 2019 - pubs.rsc.org
The development of functional perovskites for future technologies can be achieved though
the combinatorial synthetic method of evaporative physical vapour deposition (HT-ePVD) …
the combinatorial synthetic method of evaporative physical vapour deposition (HT-ePVD) …
Effects of structure formation on the surface morphology and internal microstructure of GaAs thin films
W Tian, Q Chen, Z Bian, Y Gao, Q Xie… - Journal of Physics …, 2024 - iopscience.iop.org
Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron
saturation drift rate, and other irreplaceable semiconducting properties. They play an …
saturation drift rate, and other irreplaceable semiconducting properties. They play an …
Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition
Single-crystal metastable hexagonal perovskite YAlO3 (H-YAP) films were epitaxially grown
on GaAs (111) A by utilizing sub-nanolaminated (snl) and nanolaminated (nl) atomic layer …
on GaAs (111) A by utilizing sub-nanolaminated (snl) and nanolaminated (nl) atomic layer …