Memristive devices, which combine a resistor with memory functions such that voltage
pulses can change their resistance (and hence their memory state) in a nonvolatile manner …

Costly data movement in terms of time and energy in traditional von Neumann systems is
exacerbated by emerging information technologies related to artificial intelligence. In …

The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …

In this study, we demonstrate the implementation of programmable threshold logics using a
32× 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the …

Recent breakthroughs in brain-inspired computing promise to address a wide range of
problems from security to healthcare. However, the current strategy of implementing artificial …

Memristor‐based ternary content‐addressable memory (TCAM) has emerged as an
alternative to conventional static random‐access memory (SRAM)‐based TCAM because of …

In this study, we meticulously engineered an Al-doped hafnia-based ferroelectric tunneling
junction (FTJ) with a metal–ferroelectric–silicon (MFS) structure. We conducted a thorough …

As scaling down to the nanoscale, the dramatically increased morphological deviation
between nanostructures becomes a major challenge in implementing large‐scale …

With the advancements in Web of Things, Artificial Intelligence, and other emerging
technologies, there is an increasing demand for artificial visual systems to perceive and …

Recently, ferroelectric memory utilizing hafnium oxide has emerged as an attractive option
compared to existing memory technologies, primarily due to its scalability and energy …