Effects of source/drain electrodes on the performance of InSnO thin-film transistors
Q Li, D Han, J Dong, D Xu, Y Li, Y Wang, X Zhang - Micromachines, 2022 - mdpi.com
Oxide thin-film transistors (TFTs) are of increasing interest in the field of advanced displays.
In this work, we explore Al, InSnO (ITO), Ti, and Mo as source/drain electrodes of ITO TFTs. A …
In this work, we explore Al, InSnO (ITO), Ti, and Mo as source/drain electrodes of ITO TFTs. A …
Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing
Q Zhang, G Xia, H Li, Q Sun, H Gong, S Wang - Nanotechnology, 2024 - iopscience.iop.org
At low temperatures about 230 C, bilayer InGaZnO/In 2 O 3 thin film transistors (TFTs) were
prepared by a solution process with lightwave annealing. The InGaZnO/In 2 O 3 bilayer TFTs …
prepared by a solution process with lightwave annealing. The InGaZnO/In 2 O 3 bilayer TFTs …
Etching characteristics and surface modification of InGaSnO thin films under Cl2/Ar plasma
JOO Young-Hee, C Jae-Won, HOU Bo… - Plasma Science and …, 2023 - iopscience.iop.org
Indium gallium tin oxide (IGTO) thin films have the potential for high mobility and low-
temperature processing, which makes them suitable for applications such as display …
temperature processing, which makes them suitable for applications such as display …
a-InGaZnO 포토트랜지스터의광전자특성분석
조영천， 강해용， 이현경， 전진호， 이현섭 - 새물리, 2024 - dbpia.co.kr
비정질 InGaZn oxide (a-IGZO) 는 넓은 밴드 갭을 갖는 금속 산화물 반도체로 광학적으로
투명하지만 산소 빈자리에 의한 밴드 갭 내 sub-gap 상태로 인해 가시광 영역의 빛을 흡수할 수 …
투명하지만 산소 빈자리에 의한 밴드 갭 내 sub-gap 상태로 인해 가시광 영역의 빛을 흡수할 수 …