Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2,
WS2 and WSe2, constitute an important class of materials with a layered crystal structure …

Abstract Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as
MoS 2, WS 2, MoSe 2, and WSe 2, have received extensive attention in the past decade due …

Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen
vacancies significantly affect their properties. In this work, we provide a reproducible and …

Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and
understanding of their electronic and optical functionality represent major challenges …

Substitutionally doped 2D transition metal dichalcogenides are primed for next-generation
device applications such as field effect transistors (FET), sensors, and optoelectronic circuits …

Chalcogen vacancies are generally considered to be the most common point defects in
transition metal dichalcogenide (TMD) semiconductors because of their low formation …

Recently, defect architectured photocatalysis is proved to be the most versatile choice for
high solar to chemical energy conversion processes. Defect engineering strategies are of …

Reward‐modulated spike‐timing‐dependent plasticity (R‐STDP) is a brain‐inspired
reinforcement learning (RL) rule, exhibiting potential for decision‐making tasks and artificial …

Memristor devices that exhibit high integration density, fast speed, and low power
consumption are candidates for neuromorphic devices. Here, we demonstrate a filament …

The atomic and electronic structure of intrinsic defects in a WSe 2 monolayer grown on
graphite was revealed by low temperature scanning tunneling microscopy and …