Material platforms for defect qubits and single-photon emitters
Quantum technology has grown out of quantum information theory and now provides a
valuable tool that researchers from numerous fields can add to their toolbox of research …
valuable tool that researchers from numerous fields can add to their toolbox of research …
First-principles calculations of point defects for quantum technologies
Point defects in semiconductors and insulators form an exciting system for realizing quantum
technologies, including quantum computing, communication, and metrology. Defects …
technologies, including quantum computing, communication, and metrology. Defects …
Donor and acceptor characteristics of native point defects in GaN
The semiconducting behaviour and optoelectronic response of gallium nitride is governed
by point defect processes, which, despite many years of research, remain poorly …
by point defect processes, which, despite many years of research, remain poorly …
Computational study of native defects and defect migration in wurtzite AlN: an atomistic approach
We derive an empirical, lattice energy consistent interatomic force field model for wurtzite
AlN to predict consistently a wide range of physical and defect properties. Using Mott …
AlN to predict consistently a wide range of physical and defect properties. Using Mott …
Physics-separating artificial neural networks for predicting sputtering and thin film deposition of AlN in Ar/N2 discharges on experimental timescales
T Gergs, T Mussenbrock… - Journal of Physics D …, 2023 - iopscience.iop.org
Understanding and modeling plasma–surface interactions frame a multi-scale as well as
multi-physics problem. Scale-bridging machine learning surface surrogate models have …
multi-physics problem. Scale-bridging machine learning surface surrogate models have …
Charge-optimized many-body interaction potential for AlN revisited to explore plasma–surface interactions
Plasma–surface interactions during AlN thin film sputter deposition could be studied by
means of reactive molecular dynamics (RMD) methods. This requires an interaction …
means of reactive molecular dynamics (RMD) methods. This requires an interaction …
Formation of intrinsic point defects in AlN: a study of donor and acceptor characteristics using hybrid QM/MM techniques
The wide-gap material aluminium nitride (AlN) is gaining increasing attention for its
applications in optoelectronics, energy, and quantum computing, making the investigation of …
applications in optoelectronics, energy, and quantum computing, making the investigation of …
Modeling of interface and internal disorder applied to XRD analysis of Ag-based nano-multilayers
D Ariosa, C Cancellieri, V Araullo-Peters… - … applied materials & …, 2018 - ACS Publications
Multilayered structures are a promising route to tailor electronic, magnetic, optical, and/or
mechanical properties and durability of functional materials. Sputter deposition at room …
mechanical properties and durability of functional materials. Sputter deposition at room …
Radiation resistance of AlN ceramics as a result of irradiation with low-energy C2+ ions
T Gladkikh, A Kozlovskiy, K Dukenbayev… - Materials …, 2019 - Elsevier
The paper presents the results of a study of the radiation resistance of ceramic materials
based on aluminum nitride. The irradiation was carried out by C 2+ ions with an energy of 40 …
based on aluminum nitride. The irradiation was carried out by C 2+ ions with an energy of 40 …
[HTML][HTML] Defect control strategies for Al1− xGdxN alloys
Tetrahedrally bonded III-N and related alloys are useful for a wide range of applications from
optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer …
optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer …