Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high
electron mobility and low dielectric constant. Compared with traditional Si devices, these …

Envelope tracking (ET) is by now a well-established technique that improves the efficiency of
microwave power amplifiers (PAs) compared to what can be obtained with conventional …

The design of power magnetic components for operation at high frequency (HF, 3-30 MHz)
has been hindered by a lack of magnetic material performance data and by the limited …

The performance of a string of series-connected batteries is typically restricted by the worst
cell in the string and a single failure point will render the entire string unusable. To address …

This letter presents a high-power resonant inverter using an enhancement mode gallium
nitride (eGaN) device with magnetic resonant coupling (MRC) coils at 13.56 MHz for …

Integration is a key step in utilizing advances in GaN technologies and enabling efficient
switched-mode power conversion at very high frequencies (VHF). This paper addresses …

This paper develops a 200-W wide-input-range (64-160-to-24-V) rail grade dc-dc converter
based on gallium nitride devices. A two-stage configuration is proposed. The first regulated …

This paper reviews the physical mechanisms responsible for breakdown current in
AlGaN/GaN high electron mobility transistors (HEMTs). Through a critical comparison …

This paper develops a 200 W two-stage rail grade dc-dc module based on gallium-nitride
devices. It converts a wide input voltage (64-160 V) to a constant output voltage (24 V) …

For determining the dynamic ON-resistance R dyn, on of a power transistor, the voltage and
current waveforms have to be measured during the switching operation. The novel …