Memristive devices are considered one of the most promising candidates to overcome
technological limitations for realizing next‐generation memories, logic applications, and …

A resistive switching random access memory (RRAM) has occupied great scientific and
industrial interest for next-generation data storage technology because of its advantages of …

Multifunctional electronic devices that possess synchronously multiphysical characteristics
are in great demand to be widely used in various complex conditions. Herein, for the most …

In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a
low-cost and low temperature approach. In this approach, oxidation of zinc metal was …

In this work, we report the usage of micro-cantilever printed silver nanoparticles (AgNP)
contact pads for fabrication of ZnO nanowire (NW) Schottky diode-based sensors for …

With the memory device is required to be widely used in more complex environment, the
exploration of new memory device have become a focus of research. Herein, a resistive …

Novel hardware concepts in the framework of neuromorphic engineering are intended to
overcome fundamental limits of current computer technologies and to be capable of efficient …

With this work we introduce a novel memristor in a lateral geometry whose resistive
switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive …

This work reports the fabrication of ZnO single-nanowire (SNW) Schottky diode based-
sensors with micro-cantilever printed AgNP contact pads, for room temperature (RT) …

Nanowires are an increasingly prevalent class of nanomaterials in composites and devices,
with arrays and other complex geometries used in various applications. Little investigation …