3D simulation of impact ionization induced kink effect in AlGaN/GaN HEMTs: A novel split channel design with asymmetric double gate for kink suppression
In this paper, we present 3D simulation of AlGaN/GaN High Electron Mobility Transistors
(HEMTs) to demonstrate impact ionization generated kink effect on current-voltage …
(HEMTs) to demonstrate impact ionization generated kink effect on current-voltage …
An Improved Graphene FET with Reduced Miller Capacitance Using Extended Gate Structure and Heterogeneous Oxide Dielectric
In this paper, we propose an improved design for graphene field effect transistors (GFETs) to
reduce Miller capacitance. We use an in-house built quantum solver of 2D materials to …
reduce Miller capacitance. We use an in-house built quantum solver of 2D materials to …