3D simulation of impact ionization induced kink effect in AlGaN/GaN HEMTs: A novel split channel design with asymmetric double gate for kink suppression

SG Kirtania, MNA Aadit, MK Alam - 2017 3rd International …, 2017 - ieeexplore.ieee.org
In this paper, we present 3D simulation of AlGaN/GaN High Electron Mobility Transistors
(HEMTs) to demonstrate impact ionization generated kink effect on current-voltage …

An Improved Graphene FET with Reduced Miller Capacitance Using Extended Gate Structure and Heterogeneous Oxide Dielectric

MNA Aadit, US Khan, SN Juthi - 2017 2nd International …, 2017 - ieeexplore.ieee.org
In this paper, we propose an improved design for graphene field effect transistors (GFETs) to
reduce Miller capacitance. We use an in-house built quantum solver of 2D materials to …