[HTML][HTML] Reliability of wide band gap power electronic semiconductor and packaging: A review
Y Wang, Y Ding, Y Yin - Energies, 2022 - mdpi.com
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …
The mechanism of defect creation and passivation at the SiC/SiO2 interface
From the viewpoint of application in power electronics, SiC possesses the greatest
advantage of having SiO 2 as its native oxide. Unfortunately, the usual thermal oxidation …
advantage of having SiO 2 as its native oxide. Unfortunately, the usual thermal oxidation …
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs)
are increasingly entering the high power device market. Besides all the well-known benefits …
are increasingly entering the high power device market. Besides all the well-known benefits …
Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation
VV Afanas'ev, A Stesmans, F Ciobanu, G Pensl… - Applied Physics …, 2003 - pubs.aip.org
An analysis of fast and slow traps at the interface of 4H–SiC with oxides grown in O2, N2O,
and NO reveals that the dominant positive effect of nitridation is due to a significant reduction …
and NO reveals that the dominant positive effect of nitridation is due to a significant reduction …
Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition
Molybdenum disulfide (MoS2) films, which are only a single atomic layer thick, have been
synthesized by chemical vapor deposition (CVD) and have gained significant attention due …
synthesized by chemical vapor deposition (CVD) and have gained significant attention due …
Time-dependent dielectric breakdown of commercial 1.2 kV 4H-SiC power MOSFETs
Constant-voltage time-dependent dielectric breakdown (TDDB) measurements are
performed on recently manufactured commercial 1.2 kV 4H-SiC power metal-oxide …
performed on recently manufactured commercial 1.2 kV 4H-SiC power metal-oxide …
Theoretical study of the mechanism of dry oxidation of -SiC
Possible defect structures, arising from the interaction of O 2 molecules with an ideal portion
of the SiC∕ Si O 2 interface, have been investigated systematically using density functional …
of the SiC∕ Si O 2 interface, have been investigated systematically using density functional …
Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface
CY Lu, JA Cooper, T Tsuji, G Chung… - … on Electron Devices, 2003 - ieeexplore.ieee.org
We report the effect of processing variables on the inversion layer electron mobility of (0001)-
oriented 4H-SiC n-channel MOSFETs. The process variables investigated include: i) implant …
oriented 4H-SiC n-channel MOSFETs. The process variables investigated include: i) implant …
Superhydrophobic modification of polyurethane sponge for the oil-water separation
B Lin, J Chen, ZT Li, FA He, DH Li - Surface and coatings technology, 2019 - Elsevier
In this work, the fluoroalkylsilane-modified SiO 2 nanoparticles (NPs) were immobilized on
the polyurethane sponges by a highly efficient drop-coating method using different polymers …
the polyurethane sponges by a highly efficient drop-coating method using different polymers …
Band alignment and defect states at SiC/oxide interfaces
VV Afanas'Ev, F Ciobanu, S Dimitrijev… - Journal of Physics …, 2004 - iopscience.iop.org
Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and
silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of …
silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of …