Abstract Two‐dimensional (2D) materials as tungsten disulphide (WS2) are rising as the
ideal platform for the next generation of nanoscale devices due to the excellent electric …

Advancements in the synthesis of large-area, high-quality two-dimensional transition metal
dichalcogenides such as MoS2 play a crucial role in the development of future electronic …

The construction of lateral pn junctions is very important and challenging in two-dimensional
(2D) semiconductor manufacturing process. Previous researches have demonstrated that …

Reducing gap distance to the nanometer range exhibits a strong local electric field
enhancement, providing a promising platform for exploring light–matter interactions at the …

Despite defect‐mediated states in monolayer semiconductors have been considered as
efficient emitters in cryogenic conditions, they are severely quenched at room temperature …

Convincing signatures of Majorana zero modes (MZMs) are one necessary requirement for
achieving fault-tolerant quantum computations based on topological superconductivity …

Two-dimensional transition-metal dichalcogenides (2D TMDCs) are considered promising
materials for optoelectronics due to their unique optical and electric properties. However …

Vacancy engineering is powerful for manipulating material properties. Selenium vacancies
(V Se) exert significantly impact on the physicochemical properties of rhenium diselenide …

Highly position-controlled ZnO nanowire (NW) arrays and nanowire-cluster (NW–C) arrays
are grown on mask-patterned gallium nitride (GaN) substrates by hydrothermal method …

Atomic defects in two-dimensional (2D) semiconductors are promising single exciton traps
for achieving quantum emission. However, excessively high density of defects often makes it …